VSY
參數(shù)資料
型號: ADA4001-2ARZ-RL
廠商: Analog Devices Inc
文件頁數(shù): 6/12頁
文件大小: 0K
描述: IC OPAMP JFET RRO DUAL LN 8SOIC
標準包裝: 2,500
放大器類型: J-FET
電路數(shù): 2
輸出類型: 滿擺幅
轉(zhuǎn)換速率: 25 V/µs
增益帶寬積: 16.7MHz
-3db帶寬: 10.3MHz
電流 - 輸入偏壓: 20pA
電壓 - 輸入偏移: 500µV
電流 - 電源: 2mA
電流 - 輸出 / 通道: 50mA
電壓 - 電源,單路/雙路(±): 10 V ~ 36 V,±5 V ~ 18 V
工作溫度: -40°C ~ 125°C
安裝類型: 表面貼裝
封裝/外殼: 8-SOIC(0.154",3.90mm 寬)
供應(yīng)商設(shè)備封裝: 8-SO
包裝: 帶卷 (TR)
Data Sheet
ADA4001-2
Rev. C | Page 3 of 12
SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
VSY = ±15 V, VCM = 0 V, TA = 25°C, unless otherwise noted.
Table 1.
Parameter
Symbol
Test Conditions/Comments
Min
Typ
Max
Unit
INPUT CHARACTERISTICS
Offset Voltage
VOS
±0.5
±1.5
mV
40°C < TA < +125°C
±2.5
mV
Offset Voltage Drift
ΔVOS/ΔT
±5
V/°C
Input Bias Current
IB
20
30
pA
40°C < TA < +125°C
4
nA
Input Offset Current
IOS
20
pA
40°C < TA < +125°C
2
nA
Input Voltage Range
12.5
+12.5
V
Common-Mode Rejection Ratio
CMRR
VCM = 12.5 V to +12.5 V
96
105
dB
40°C < TA < +125°C
90
dB
Large Signal Voltage Gain
AVO
RL = 10 k, VO = 13.5 V to +13.5 V
104
112
dB
RL = 2 k, VO = 13.5 V to +13.5 V
104
112
dB
40°C < TA < +125°C
90
dB
RL = 600 , VO = 13.0 V to +13.0 V
90
93
dB
Input Capacitance, Differential
CDM
VCM = 0 V
3.1
pF
Input Capacitance, Common-Mode
CCM
VCM = 0 V
4.8
pF
Input Resistance
VCM = 0 V
>1 × 1013
OUTPUT CHARACTERISTICS
Output Voltage High
VOH
RL = 10 k
14.8
V
RL = 2 k
14.5
V
RL = 600
13.5
V
Output Voltage Low
VOL
RL = 10 k
14.8
V
RL = 2 k
14.5
V
RL = 600
13.5
V
Short-Circuit Current
ISC
±50
mA
POWER SUPPLY
Power Supply Rejection Ratio
PSRR
VS = ±4.5 V to ±18 V
96
110
dB
40°C < TA < +125°C
93
dB
Operating Voltage Range
±5
±18
V
Supply Current/Amplifier
ISY
VO = 0 V
2
3
mA
4
mA
DYNAMIC PERFORMANCE
Slew Rate
SR
RL = 2 k
±151
±25
V/s
Gain Bandwidth Product
GBP
VIN = 5 mV p-p, RL = 10 k, AV = 100
16.7
MHz
Unity-Gain Crossover
UGC
VIN = 5 mV p-p, RL = 10 k, AV = 1
10.2
MHz
Phase Margin
φM
76
Degrees
3 dB Closed-Loop Bandwidth
3 dB
AV = 1, VIN = 5 mV p-p
10.3
MHz
Settling Time
tS
To 0.01%, 10 V step, G = +1
1.2
s
Total Harmonic Distortion (THD) + Noise
THD + N
1 kHz, G = +1, RL = 2 k
0.00006
%
NOISE PERFORMANCE
Voltage Noise
en rms
20 Hz to 20 kHz
1.2
μV rms
Voltage Noise Density
en
f = 100 Hz
8.8
nV/√Hz
f = 1 kHz
7.7
nV/√Hz
Current Noise Density
in
f = 1 kHz
3
fA/√Hz
1
Guaranteed by design and characterization.
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