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參數(shù)資料
| 型號(hào)： | AD8597ARZ-REEL7 |
| 廠商： | Analog Devices Inc |
| 文件頁數(shù)： | 14/20頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC OPAMP GP 10MHZ ULDIST 8SOIC |
| 設(shè)計(jì)資源： | Automated Calibration Technique That Reduces AD5360 Offset Voltage to Less Than 1 mV (CN0123) |
| 標(biāo)準(zhǔn)包裝： | 1,000 |
| 放大器類型： | 通用 |
| 電路數(shù)： | 1 |
| 轉(zhuǎn)換速率： | 16 V/µs |
| 增益帶寬積： | 10MHz |
| 電流 - 輸入偏壓： | 25nA |
| 電壓 - 輸入偏移： | 10µV |
| 電流 - 電源： | 5mA |
| 電流 - 輸出 / 通道： | 52mA |
| 電壓 - 電源，單路/雙路(±)： | 9 V ~ 36 V，±4.5 V ~ 18 V |
| 工作溫度： | -40°C ~ 125°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 8-SOIC（0.154"，3.90mm 寬） |
| 供應(yīng)商設(shè)備封裝： | 8-SO |
| 包裝： | 帶卷 (TR) |
Data Sheet
AD8597/AD8599
Rev. E | Page 3 of 20
SPECIFICATIONS
VSY = ±5 V, VCM = 0 V, VO = 0 V, TA = 25°C, unless otherwise specified.
Table 2.
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
INPUT CHARACTERISTICS
Offset Voltage
VOS
15
120
μV
40°C ≤ TA ≤ +125°C
180
μV
Offset Voltage Drift
ΔVOS/ΔT
40°C ≤ TA ≤ +125°C
0.8
2.2
μV/°C
Input Bias Current
IB
40
210
nA
40°C ≤ TA ≤ +125°C
340
nA
Input Offset Current
IOS
65
250
nA
40°C ≤ TA ≤ +125°C
340
nA
Input Voltage Range
IVR
2.0
+2.0
V
Common-Mode Rejection Ratio
CMRR
2.0 V ≤ VCM ≤ +2.0 V
120
135
dB
40°C ≤ TA ≤ +125°C
105
dB
Large Signal Voltage Gain
AVO
RL ≥ 600 Ω, VO = 11 V to +11 V
105
110
dB
40°C ≤ TA ≤ +125°C
100
dB
Input Capacitance
Differential Capacitance
CDIFF
15.4
pF
Common-Mode Capacitance
CCM
5.5
pF
OUTPUT CHARACTERISTICS
Output Voltage High
VOH
RL = 600 Ω
3.5
3.7
V
40°C ≤ TA ≤ +125°C
3.3
V
RL = 2 kΩ
3.7
3.8
V
40°C ≤ TA ≤ +125°C
3.5
V
Output Voltage Low
VOL
RL = 600 Ω
3.6
3.4
V
40°C ≤ TA ≤ +125°C
3.3
V
RL = 2 kΩ
3.7
3.5
V
40°C ≤ TA ≤ +125°C
3.4
V
Output Short-Circuit Current
ISC
±52
mA
Closed-Loop Output Impedance
ZOUT
At 1 MHz, AV = 1
5
Ω
POWER SUPPLY
Power Supply Rejection Ratio
PSRR
VSY = ±18 V to ±4.5 V
120
140
dB
40°C ≤ TA ≤ +125°C
118
dB
Supply Current per Amplifier
ISY
4.8
5.5
mA
40°C ≤ TA ≤ +125°C
6.5
mA
DYNAMIC PERFORMANCE
Slew Rate
SR
AV = 1, RL = 2 kΩ
14
V/μs
AV = 1, RL = 2 kΩ
14
V/μs
Settling Time
tS
To 0.01%, step = 10 V
2
μs
Gain Bandwidth Product
GBP
10
MHz
Phase Margin
ΦM
60
Degrees
NOISE PERFORMANCE
Peak-to-Peak Noise
en p-p
0.1 Hz to 10 Hz
76
nV p-p
Voltage Noise Density
en
f = 1 kHz
1.07
1.15
nV/√Hz
f = 10 Hz
1.5
nV/√Hz
Correlated Current Noise
f = 1 kHz
2.0
pA/√Hz
f = 10 Hz
4.2
pA/√Hz
Uncorrelated Current Noise
f = 1 kHz
2.4
pA/√Hz
f = 10 Hz
5.2
pA/√Hz
Total Harmonic Distortion + Noise
THD + N
G = 1, RL ≥ 1 kΩ, f = 1 kHz, VRMS = 1 V
120
dB
Channel Separation
CS
f = 10 kHz
120
dB
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