
AD8515
Rev. D | Page 3 of 16
SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
VS = 1.8 V, VCM = VS/2, TA = 25°C, unless otherwise noted.
Table 1.
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
INPUT CHARACTERISTICS
Offset Voltage
VOS
VCM = VS/2
1
6
mV
40°C < TA < +125°C
8
mV
Input Bias Current
IB
VS = 1.8 V
2
30
pA
40°C < TA < +85°C
600
pA
40°C < TA < +125°C
8
nA
Input Offset Current
IOS
1
10
pA
40°C < TA < +125°C
500
pA
Input Voltage Range
0
1.8
V
Common-Mode Rejection Ratio
CMRR
0 V ≤ VCM ≤ 1.8 V
50
dB
40°C < TA < +125°C
47
dB
Large Signal Voltage Gain
AVO
RL = 100 kΩ, 0.3 V ≤ VOUT ≤ 1.5 V
110
400
V/mV
Offset Voltage Drift
ΔVOS/ΔT
4
μV/°C
OUTPUT CHARACTERISTICS
Output Voltage High
VOH
IL = 100 μA, 40°C < TA < +125°C
1.79
V
IL = 750 μA, 40°C < TA < +125°C
1.77
V
Output Voltage Low
VOL
IL = 100 μA, 40°C < TA < +125°C
10
mV
IL = 750 μA, 40°C < TA < +125°C
30
mV
Short Circuit Limit
ISC
20
mA
POWER SUPPLY
Supply Current/Amplifier
ISY
VOUT = VS/2
325
450
μA
–40°C < TA < +125°C
500
μA
DYNAMIC PERFORMANCE
Slew Rate
SR
RL = 10 kΩ
2.7
V/μs
Gain Bandwidth Product
GBP
5
MHz
NOISE PERFORMANCE
Voltage Noise Density
en
f = 1 kHz
22
nV/√Hz
f = 10 kHz
20
nV/√Hz
Current Noise Density
in
f = 1 kHz
0.05
pA/√Hz