@ VS = 卤5 V, V
鍙冩暩(sh霉)璩囨枡
鍨嬭櫉锛� AD8510AR
寤犲晢锛� Analog Devices Inc
鏂囦欢闋佹暩(sh霉)锛� 14/20闋�
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鎻忚堪锛� IC OPAMP JFET 8MHZ PREC LN 8SOIC
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瑷�(sh猫)瑷�(j矛)璩囨簮锛� Versatile High Precision Programmable Current Sources Using DACs, Op Amps, and MOSFET Transistors (CN0151)
妯�(bi膩o)婧�(zh菙n)鍖呰锛� 98
鏀惧ぇ鍣ㄩ鍨嬶細 J-FET
闆昏矾鏁�(sh霉)锛� 1
杞�(zhu菐n)鎻涢€熺巼锛� 20 V/µs
澧炵泭甯跺绌嶏細 8MHz
闆绘祦 - 杓稿叆鍋忓锛� 25pA
闆诲 - 杓稿叆鍋忕Щ锛� 100µV
闆绘祦 - 闆绘簮锛� 2.2mA
闆绘祦 - 杓稿嚭 / 閫氶亾锛� 70mA
闆诲 - 闆绘簮锛屽柈璺�/闆欒矾(±)锛� ±4.5 V ~ 18 V
宸ヤ綔婧害锛� -40°C ~ 125°C
瀹夎椤炲瀷锛� 琛ㄩ潰璨艰
灏佽/澶栨锛� 8-SOIC锛�0.154"锛�3.90mm 瀵級
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鍖呰锛� 绠′欢
AD8510/AD8512/AD8513
Rev. I | Page 3 of 20
SPECIFICATIONS
@ VS = 卤5 V, VCM = 0 V, TA = 25掳C, unless otherwise noted.
Table 1.
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
INPUT CHARACTERISTICS
Offset Voltage (B Grade)1
VOS
0.08
0.4
mV
40掳C < TA < +125掳C
0.8
mV
Offset Voltage (A Grade)
VOS
0.1
0.9
mV
40掳C < TA < +125掳C
1.8
mV
Input Bias Current
IB
21
75
pA
40掳C < TA < +85掳C
0.7
nA
40掳C < TA < +125掳C
7.5
nA
Input Offset Current
IOS
5
50
pA
40掳C < TA < +85掳C
0.3
nA
40掳C < TA < +125掳C
0.5
nA
Input Capacitance
Differential
12.5
pF
Common Mode
11.5
pF
Input Voltage Range
2.0
+2.5
V
Common-Mode Rejection Ratio
CMRR
VCM = 2.0 V to +2.5 V
86
100
dB
Large-Signal Voltage Gain
AVO
RL = 2 k惟, VO = 3 V to +3 V
65
107
V/mV
Offset Voltage Drift (B Grade)1
螖VOS/螖T
0.9
5
渭V/掳C
Offset Voltage Drift (A Grade)
螖VOS/螖T
1.7
12
渭V/掳C
OUTPUT CHARACTERISTICS
Output Voltage High
VOH
RL = 10 k惟
4.1
4.3
V
Output Voltage Low
VOL
RL = 10 k惟, 40掳C < TA < +125掳C
4.9
4.7
V
Output Voltage High
VOH
RL = 2 k惟
3.9
4.2
V
Output Voltage Low
VOL
RL = 2 k惟, 40掳C < TA < +125掳C
4.9
4.5
V
Output Voltage High
VOH
RL = 600 惟
3.7
4.1
V
Output Voltage Low
VOL
RL = 600 惟, 40掳C < TA < +125掳C
4.8
4.2
V
Output Current
IOUT
卤40
卤54
mA
POWER SUPPLY
Power Supply Rejection Ratio
PSRR
VS = 卤4.5 V to 卤18 V
86
130
dB
Supply Current/Amplifier
ISY
AD8510/AD8512/AD8513
VO = 0 V
2.0
2.3
mA
AD8510/AD8512
40掳C < TA < +125掳C
2.5
mA
AD8513
40掳C < TA < +125掳C
2.75
mA
DYNAMIC PERFORMANCE
Slew Rate
SR
RL = 2 k惟
20
V/渭s
Gain Bandwidth Product
GBP
8
MHz
Settling Time
tS
To 0.1%, 0 V to 4 V step, G = +1
0.4
渭s
Total Harmonic Distortion (THD) + Noise
THD + N
1 kHz, G = +1, RL = 2 k惟
0.0005
%
Phase Margin
蠁M
44.5
Degrees
NOISE PERFORMANCE
Voltage Noise Density
en
f = 10 Hz
34
nV/鈭欻z
f = 100 Hz
12
nV/鈭欻z
f = 1 kHz
8.0
10
nV/鈭欻z
f = 10 kHz
7.6
nV/鈭欻z
Peak-to-Peak Voltage Noise
en p-p
0.1 Hz to 10 Hz bandwidth
2.4
5.2
渭V p-p
1 AD8510/AD8512 only.
鐩搁棞(gu膩n)PDF璩囨枡
PDF鎻忚堪
AF0805FR-073K3L RES ANTI-SULF 3.3K OHM 1% 0805
F1206B1R50FSTR FUSE 1.50A 63V FAST THIN 1206
1SMB70AT3 TVS ZENER UNIDIR 600W 70V SMB
F1206B1R00FWTR FUSE 1.00A 63V FAST THIN 1206
1SMC36AT3 TVS ZENER UNIDIR 1500W 36V SMC
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