參數(shù)資料
型號(hào): AD8397ARDZ-REEL7
廠商: Analog Devices Inc
文件頁數(shù): 14/16頁
文件大小: 0K
描述: IC OPAMP VF R-R DUAL LN 8SOIC
標(biāo)準(zhǔn)包裝: 1,000
放大器類型: 電壓反饋
電路數(shù): 2
輸出類型: 滿擺幅
轉(zhuǎn)換速率: 53 V/µs
-3db帶寬: 69MHz
電流 - 輸入偏壓: 200pA
電壓 - 輸入偏移: 1000µV
電流 - 電源: 11mA
電流 - 輸出 / 通道: 310mA
電壓 - 電源,單路/雙路(±): 3 V ~ 24 V,±1.5 V ~ 12 V
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 8-SOIC(0.154",3.90mm Width)裸露焊盤
供應(yīng)商設(shè)備封裝: 8-SOIC-EP
包裝: 帶卷 (TR)
AD8397
Rev. A | Page 7 of 16
ABSOLUTE MAXIMUM RATINGS
Table 5.
Parameter
Rating
Supply Voltage
26.4 V
Storage Temperature Range
65°C to +125°C
Operating Temperature Range
40°C to +85°C
Lead Temperature (Soldering, 10 sec)
300°C
Junction Temperature
150°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
1 Thermal resistance for standard JEDEC 4-layer board:
8-lead SOIC_N: θJA = 157.6°C/W
8-Lead SOIC_N_EP: θJA = 47.2°C/W
MAXIMUM POWER DISSIPATION
The maximum power that can be dissipated safely by the AD8397
is limited by the associated rise in junction temperature. The
maximum safe junction temperature for plastic encapsulated
devices is determined by the glass transition temperature of the
plastic, approximately 150°C. Temporarily exceeding this limit
may cause a shift in parametric performance due to a change in
the stresses exerted on the die by the package.
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
–40 –30 –20 –10
0
1020
3040506070
8090
05
06
9-
02
0
AMBIENT TEMPERATURE (°C)
MA
XI
MU
M
P
O
W
E
R
D
ISS
IP
A
T
IO
N
(
W
)
TJ = 150°C
8-LEAD SOIC
Figure 4. Maximum Power Dissipation vs. Ambient Temperature
ESD CAUTION
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