參數資料
型號: AD823ARZ-RL
廠商: Analog Devices Inc
文件頁數: 17/20頁
文件大?。?/td> 0K
描述: IC OPAMP JFET R-R DUAL LN 8SOIC
標準包裝: 2,500
放大器類型: J-FET
電路數: 2
輸出類型: 滿擺幅
轉換速率: 25 V/µs
-3db帶寬: 16MHz
電流 - 輸入偏壓: 5pA
電壓 - 輸入偏移: 700µV
電流 - 電源: 7mA
電流 - 輸出 / 通道: 17mA
電壓 - 電源,單路/雙路(±): 3 V ~ 36 V,±1.5 V ~ 18 V
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 8-SOIC(0.154",3.90mm 寬)
供應商設備封裝: 8-SO
包裝: 帶卷 (TR)
AD823
Data Sheet
Rev. E | Page 6 of 20
ABSOLUTE MAXIMUM RATINGS
Table 4.
Parameter
Rating
Supply Voltage
36 V
Internal Power Dissipation
PDIP (N)
1.3 W
SOIC (R)
0.9 W
Input Voltage (Common Mode)
±VS
Differential Input Voltage
±VS
Output Short-Circuit Duration
Storage Temperature Range N, R
65°C to +125°C
Operating Temperature Range
40°C to +85°C
Lead Temperature Range
(Soldering, 10 sec)
300°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL RESISTANCE
θJA is specified for the worst-case conditions, that is, a device
soldered in a circuit board for surface-mount packages.
Specification is for device in free air.
Table 5. Thermal Resistance
Package Type
θJA
Unit
8-Lead PDIP
90
°C/W
8-Lead SOIC
160
°C/W
MA
XI
MU
M
PO
W
ER
D
ISSI
PA
TION
(
W)
AMBIENT TEMPERATURE (°C)
2.0
1.5
0
–50
90
–40 –30 –20 –10
0
10
20
30
50
60
70
80
40
1.0
0.5
8-LEAD PDIP
8-LEAD SOIC
TJ = 150°C
00901-
004
Figure 4. Maximum Power Dissipation vs. Temperature
ESD CAUTION
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