VOCM
參數(shù)資料
型號(hào): AD8131ARZ
廠商: Analog Devices Inc
文件頁數(shù): 20/21頁
文件大小: 0K
描述: IC AMP DIFF LDIST 60MA 8SOIC
標(biāo)準(zhǔn)包裝: 98
放大器類型: 差分
電路數(shù): 1
輸出類型: 差分
轉(zhuǎn)換速率: 2000 V/µs
-3db帶寬: 400MHz
電流 - 輸入偏壓: 500nA
電壓 - 輸入偏移: 1500µV
電流 - 電源: 11.5mA
電流 - 輸出 / 通道: 60mA
電壓 - 電源,單路/雙路(±): 2.8 V ~ 11 V,±1.4 V ~ 5.5 V
工作溫度: -40°C ~ 125°C
安裝類型: 表面貼裝
封裝/外殼: 8-SOIC(0.154",3.90mm 寬)
供應(yīng)商設(shè)備封裝: 8-SO
包裝: 管件
產(chǎn)品目錄頁面: 765 (CN2011-ZH PDF)
AD8131
Rev. B | Page 7 of 20
ABSOLUTE MAXIMUM RATINGS
Table 5.1
Parameter
Rating
Supply Voltage
±5.5 V
VOCM
±VS
Internal Power Dissipation
250 mW
Operating Temperature Range
40°C to +125°C
Storage Temperature Range
65°C to +150°C
Lead Temperature (Soldering 10 sec)
300°C
1 Thermal resistance measured on SEMI standard 4-layer board.
8-lead SOIC: θJA = 121°C/W.
8-lead MSOP: θJA = 142°C/W.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only, functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
AMBIENT TEMPERATURE (
°C)
–50
0
TJ = 150°C
2.0
1.5
1.0
M
A
XIM
U
M
POW
E
R
D
ISSIPA
TION
(
W
)
8-LEAD SOIC
PACKAGE
–20
10
100
130
8-LEAD
MSOP
PACKAGE
0.5
40
70
01072-044
Figure 3. Plot of Maximum Power Dissipation vs. Temperature
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
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