參數(shù)資料
型號(hào): AD8109-EB
廠商: Analog Devices, Inc.
英文描述: 325 MHz, 8 x 8 Buffered Video Crosspoint Switches
中文描述: 325兆赫,8 × 8的緩沖視頻交叉點(diǎn)開關(guān)
文件頁(yè)數(shù): 5/28頁(yè)
文件大小: 434K
代理商: AD8109-EB
AD8108/AD8109
–5–
REV. 0
WARNNG
ESD SENSITIVE DEVICE
C AUT ION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD8108/AD8109 features proprietary ESD protection circuitry, permanent dam-
age may occur on devices subjected to high energy electrostatic discharges. T herefore, proper
ESD precautions are recommended to avoid performance degradation or loss of functionality.
ABSOLUT E MAX IMUM RAT INGS
1
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12.0 V
Internal Power Dissipation
2
AD8108/AD8109 80-Lead Plastic T QFP (ST ) . . . . . 2.6 W
Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±
V
S
Output Short Circuit Duration
. . . . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves
Storage T emperature Range . . . . . . . . . . . . –65
°
C to +125
°
C
Lead T emperature Range (Soldering 10 sec) . . . . . . . .+300
°
C
NOT ES
1
Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. T his is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
2
Specification is for device in free air (T
= +25
°
C):
80-lead plastic T QFP (ST ):
θ
JA
= 48
°
C/W.
ORDE RING GUIDE
T emperature
Range
Package
Description
Package
Option
Model
AD8108AST
AD8109AST
AD8108-EB
AD8109-EB
–40
°
C to +85
°
C
–40
°
C to +85
°
C
80-Lead Plastic T QFP (12 mm
×
12 mm)
80-Lead Plastic T QFP (12 mm
×
12 mm)
Evaluation Board
Evaluation Board
ST -80A
ST -80A
MAX IMUM POWE R DISSIPAT ION
T he maximum power that can be safely dissipated by the
AD8108/AD8109 is limited by the associated rise in junction
temperature. T he maximum safe junction temperature for plas-
tic encapsulated devices is determined by the glass transition
temperature of the plastic, approximately +150
°
C. T emporarily
exceeding this limit may cause a shift in parametric performance
due to a change in the stresses exerted on the die by the pack-
age. Exceeding a junction temperature of +175
°
C for an ex-
tended period can result in device failure.
While the AD8108/AD8109 is internally short circuit protected,
this may not be sufficient to guarantee that the maximum junc-
tion temperature (+150
°
C) is not exceeded under all conditions.
T o ensure proper operation, it is necessary to observe the maxi-
mum power derating curves shown in Figure 3.
AMBIENT TEMPERATURE –
8
C
5.0
M
4.0
0–50
80
–40 –30 –20 –10
0
10
20
30 40
50
60 70
3.0
2.0
1.0
T
J
= 150
8
C
90
Figure 3. Maximum Power Dissipation vs. Temperature
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