參數(shù)資料
型號(hào)： AD8045ACPZ-REEL
廠商： Analog Devices Inc
文件頁(yè)數(shù)： 22/25頁(yè)
文件大小： 0K
描述： IC OPAMP VF ULDIST LN 8LFCSP
產(chǎn)品培訓(xùn)模塊： Practical Guide High Speed PCB Layout
標(biāo)準(zhǔn)包裝： 5,000
放大器類(lèi)型： 電壓反饋
電路數(shù)： 1
轉(zhuǎn)換速率： 1350 V/µs
-3db帶寬： 1GHz
電流 - 輸入偏壓： 2µA
電壓 - 輸入偏移： 200µV
電流 - 電源： 16mA
電流 - 輸出 / 通道： 70mA
電壓 - 電源，單路/雙路(±)： 3.3 V ~ 12 V，±1.65 V ~ 6 V
工作溫度： -40°C ~ 125°C
安裝類(lèi)型： 表面貼裝
封裝/外殼： 8-VFDFN 裸露焊盤(pán)，CSP
供應(yīng)商設(shè)備封裝： 8-LFCSP-VD（3x3）
包裝： 帶卷 (TR)
AD8045
Rev. A | Page 5 of 24
ABSOLUTE MAXIMUM RATINGS
Table 3.
Parameter
Rating
Supply Voltage
12.6 V
Power Dissipation
Common-Mode Input Voltage
VS 0.7 V to +VS + 0.7 V
Differential Input Voltage
±V
S
Exposed Paddle Voltage
VS
Storage Temperature
65°C to +125°C
Operating Temperature Range
40°C to +125°C
Lead Temperature Range
(Soldering 10 sec)
300°C
Junction Temperature
150°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL RESISTANCE
θJA is specified for the worst-case conditions, i.e., θJA is specified
for device soldered in circuit board for surface-mount packages.
Table 4. Thermal Resistance
Package Type
θJA
θJC
Unit
SOIC
80
30
°C/W
LFCSP
93
35
°C/W
Maximum Power Dissipation
The maximum safe power dissipation for the AD8045 is limited
by the associated rise in junction temperature (TJ) on the die. At
approximately 150°C, which is the glass transition temperature,
the properties of the plastic change. Even temporarily exceeding
this temperature limit may change the stresses that the package
exerts on the die, permanently shifting the parametric perform-
ance of the AD8045. Exceeding a junction temperature of
175°C for an extended period of time can result in changes in
silicon devices, potentially causing degradation or loss of
functionality.
The power dissipated in the package (PD) is the sum of the qui-
escent power dissipation and the power dissipated in the die
due to the AD8045 drive at the output. The quiescent power is
the voltage between the supply pins (VS) times the quiescent
current (IS).
PD = Quiescent Power + (Total Drive Power – Load Power)
()
L
2
OUT
L
OUT
S
D
R
V
–
R
V
2
V
I
V
P
×
+
×
=
RMS output voltages should be considered. If
RL is referenced to
VS, as in single-supply operation, the total drive power is VS ×
IOUT. If the rms signal levels are indeterminate, consider the
worst case, when
VOUT = VS/4 for RL to midsupply.
() (
)
L
S
D
R
/
V
I
V
P
2
4
+
×
=
In single-supply operation with RL referenced to VS, worst case
is VOUT = VS/2.
Airflow increases heat dissipation, effectively reducing θJA.
Also, more metal directly in contact with the package leads and
exposed paddle from metal traces, through holes, ground, and
power planes reduce θJA.
Figure 4 shows the maximum safe power dissipation in the
package versus the ambient temperature for the exposed paddle
SOIC (80°C/W) and LFCSP (93°C/W) package on a JEDEC
standard 4-layer board. θJA values are approximations.
04814-0-080
AMBIENT TEMPERATURE (°C)
120
–40
–20
0
20
40
60
80
100
M
A
XIM
U
M
POW
E
R
D
ISSIPA
TION
(
W
at
ts
)
0.0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
LFCSP
SOIC
Figure 4. Maximum Power Dissipation vs. Temperature for a 4-Layer Board
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate
on the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy elec-
trostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation
and loss of functionality.
相關(guān)PDF資料
PDF描述
LTC6085CDHC#PBF IC AMP R-R CMOS QUAD 16-DFN
ICTE-18RL4G TVS 1500W 18V UNIDIRECT AXIAL
7010.9903.57 FUSE 375MA 125V FAST PCB SMD T/R
LTC6241HS8#TRPBF IC OPAMP DUAL R-R 8-SOIC
LTC6241IDD#TRPBF IC OP AMP DUAL R-R 8-DFN
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AD8045ACPZ-REEL7 功能描述:IC OPAMP VF ULDIST LN 8LFCSP RoHS:是 類(lèi)別:集成電路 (IC) >> Linear - Amplifiers - Instrumentation 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 放大器類(lèi)型:J-FET 電路數(shù):2 輸出類(lèi)型:- 轉(zhuǎn)換速率:13 V/µs 增益帶寬積:3MHz -3db帶寬:- 電流 - 輸入偏壓:65pA 電壓 - 輸入偏移:3000µV 電流 - 電源:1.4mA 電流 - 輸出 / 通道:- 電壓 - 電源，單路/雙路(±):7 V ~ 36 V，±3.5 V ~ 18 V 工作溫度:-40°C ~ 85°C 安裝類(lèi)型:通孔 封裝/外殼:8-DIP（0.300"，7.62mm） 供應(yīng)商設(shè)備封裝:8-PDIP 包裝:管件
AD8045AR 制造商:Analog Devices 功能描述:ULTRA-LOW DISTORTION HIGH SPEED AMPLIFIER - Bulk
AD8045ARD 制造商:Analog Devices 功能描述:OP Amp Single Volt Fdbk 制造商:Analog Devices 功能描述:IC OP-AMP HIGH SPEED
AD8045ARD-EBZ 功能描述:BOARD EVAL FOR AD8045ARD RoHS:是 類(lèi)別:編程器，開(kāi)發(fā)系統(tǒng) >> 評(píng)估板 - 運(yùn)算放大器 系列:- 產(chǎn)品培訓(xùn)模塊:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 標(biāo)準(zhǔn)包裝:1 系列:-
AD8045ARD-REEL 制造商:Analog Devices 功能描述:OP Amp Single Volt Fdbk 制造商:Analog Devices 功能描述:OP AMP SGL VOLT FDBK 6V/12V 8SOIC N EP - Tape and Reel
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*