參數(shù)資料
型號: AD8041ANZ
廠商: Analog Devices Inc
文件頁數(shù): 14/17頁
文件大?。?/td> 0K
描述: IC OPAMP VF R-R LP LDIST 8DIP
標準包裝: 50
放大器類型: 電壓反饋
電路數(shù): 1
輸出類型: 滿擺幅
轉(zhuǎn)換速率: 170 V/µs
-3db帶寬: 170MHz
電流 - 輸入偏壓: 1.2µA
電壓 - 輸入偏移: 2000µV
電流 - 電源: 5.8mA
電流 - 輸出 / 通道: 50mA
電壓 - 電源,單路/雙路(±): 3 V ~ 12 V,±1.5 V ~ 6 V
工作溫度: -40°C ~ 85°C
安裝類型: 通孔
封裝/外殼: 8-DIP(0.300",7.62mm)
供應(yīng)商設(shè)備封裝: 8-PDIP
包裝: 管件
產(chǎn)品目錄頁面: 769 (CN2011-ZH PDF)
REV. B
AD8041
–5–
ABSOLUTE MAXIMUM RATINGS
1
Supply Voltage ............................................................ 12.6 V
Internal Power Dissipation
2
PDIP Package (N) .................................................... 1.3 W
SOIC Package (R) .................................................... 0.9 W
Input Voltage (Common Mode) ......................................
± V
S
Differential Input Voltage ...........................................
± 3.4 V
Output Short-Circuit Duration
.......................................... Observe Power Derating Curves
Storage Temperature Range N, R .............. –65
°C to +125°C
Operating Temperature Range (A Grade) ... –40
°C to +85°C
Lead Temperature Range (Soldering 10 sec) ............... 300
°C
NOTES
1Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
2Specification is for the device in free air:
8-Lead PDIP Package:
θ
JA = 90
°C/W.
8-Lead SOIC Package:
θ
JA = 155
°C/W.
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the
AD8041 is limited by the associated rise in junction temperature.
The maximum safe junction temperature for plastic encapsulated
devices is determined by the glass transition temperature of the
plastic, approximately 150
°C. Exceeding this limit temporarily
may cause a shift in parametric performance due to a change in
the stresses exerted on the die by the package. Exceeding a
junction temperature of 175
°C for an extended period can result
in device failure.
While the AD8041 is internally short-circuit protected, this may
not be sufficient to guarantee that the maximum junction tem-
perature (150
°C) is not exceeded under all conditions. To
ensure proper operation, it is necessary to observe the maximum
power derating curves.
MAXIMUM
POWER
DISSIPATION
(W)
AMBIENT TEMPERATURE ( C)
2.0
1.5
0
–50
90
–40 –30 –20 –10 0
10
20 30
50
60 70
80
40
1.0
0.5
8-LEAD PDIP PACKAGE
8-LEAD SOIC PACKAGE
TJ = 150 C
Figure 3. Maximum Power Dissipation vs. Temperature
ORDERING GUIDE
Temperature
Package
Model
Range
Description
Options
AD8041AN
–40
°C to +85°C
8-Lead PDIP
N-8
AD8041AR
–40
°C to +85°C
8-Lead Plastic SOIC
R-8
AD8041AR-REEL
–40
°C to +85°C
13" Tape and Reel
R-8
AD8041AR-REEL7
–40
°C to +85°C
7" Tape and Reel
R-8
AD8041ARZ-REEL
1
–40
°C to +85°C
13" Tape and Reel
R-8
5962-9683901MPA
2
–55
°C to +125°C
8-Lead CERDIP
Q-8
NOTES
1The Z indicates a lead-free product.
2Refer to official DSCC drawing for tested specifications.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although the
AD8041 features proprietary ESD protection circuitry, permanent damage may occur on devices
subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended
to avoid performance degradation or loss of functionality.
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