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參數(shù)資料
| 型號(hào)： | AD8031 |
| 廠商： | Analog Devices, Inc. |
| 元件分類： | 運(yùn)動(dòng)控制電子 |
| 英文描述： | 2.7 V,80 MHz Rail-to-Rail I/O Amplifiers(滿幅度輸入/輸出放大器) |
| 中文描述： | 2.7伏，80兆赫軌到軌輸入/輸出放大器（滿幅度輸入/輸出放大器） |
| 文件頁數(shù)： | 5/16頁 |
| 文件大?。?/td> | 262K |
| 代理商： | AD8031 |
AD8031/AD8032
–5–
REV. A
ORDERING GUIDE*
Temperature
Range
Package
Descriptions
Brand
Code
Package
Options
Model
AD8031AN
AD8031BN
AD8031AR
AD8031BR
AD8031ART
AD8032AN
AD8032BN
AD8032AR
AD8032BR
AD8032ARM
–40
°
C to +85
°
C
–40
°
C to +85
°
C
–40
°
C to +85
°
C
–40
°
C to +85
°
C
–40
°
C to +85
°
C
–40
°
C to +85
°
C
–40
°
C to +85
°
C
–40
°
C to +85
°
C
–40
°
C to +85
°
C
–40
°
C to +85
°
C
8-Lead P-DIP
8-Lead P-DIP
8-Lead SOIC
8-Lead SOIC
SOT-23-5
8-Lead P-DIP
8-Lead P-DIP
8-Lead SOIC
8-Lead SOIC
8-Lead
μ
SOIC
N-8
N-8
SO-8
SO-8
RT-5
N-8
N-8
SO-8
SO-8
RM-8
H0A
H9A
*R, RT, and RM models available in REELs.
ABSOLUTE MAXIMUM RATINGS
1
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +12.6 V
Internal Power Dissipation
2
Plastic DIP Package (N) . . . . . . . . . . . . . . . . . . . 1.3 Watts
Small Outline Package (R) . . . . . . . . . . . . . . . . . . 0.8 Watts
μ
SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 Watts
SOT-23-5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5 Watts
Input Voltage (Common Mode) . . . . . . . . . . . . .
±
V
S
±
0.5 V
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . .
±
3.4 V
Output Short Circuit Duration
. . . . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves
Storage Temperature Range (N, R, RM, RT)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65
°
C to +125
°
C
Lead Temperature Range (Soldering 10 sec) . . . . . . . . +300
°
C
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
2
Specification is for the device in free air:
8-Lead Plastic Package:
θ
JA
= 90
°
C/Watt
8-Lead SOIC Package:
θ
JA
= 160
°
C/Watt.
8-Lead
μ
SOIC Package:
θ
JA
= 200
°
C/Watt.
5-Lead SOT-23-5 Package:
θ
JA
= 240
°
C/Watt.
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the
AD8031/AD8032 are limited by the associated rise in junction
temperature. The maximum safe junction temperature for
plastic encapsulated devices is determined by the glass transi-
tion temperature of the plastic, approximately +150
°
C. Ex-
ceeding this limit temporarily may cause a shift in parametric
performance due to a change in the stresses exerted on the die
by the package. Exceeding a junction temperature of +175
°
C
for an extended period can result in device failure.
While the AD8031/AD8032 are internally short circuit pro-
tected, this may not be sufficient to guarantee that the maxi-
mum junction temperature (+150
°
C) is not exceeded under
all conditions. To ensure proper operation, it is necessary to
observe the maximum power derating curves shown in Figure 2.
AMBIENT TEMPERATURE –
8
C
2.0
1.5
0
–50
80
–40
M
–30 –20 –10
0
10
20
30
40
50
60
70
1.0
0.5
90
T
J
= +150
8
C
8-LEAD SOIC PACKAGE
8-LEAD
m
SOIC
SOT-23-5
8-LEAD MINI-DIP PACKAGE
Figure 2. Maximum Power Dissipation vs. Temperature
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD8031/AD8032 feature proprietary ESD protection circuitry, permanent damage
may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
(continued from page 1)
Operating on supplies from +2.7 V to +12 V and dual supplies up
to
±
6 V, the AD8031/AD8032 are ideal for a wide range of applica-
tions, from battery operated systems with large bandwidth re-
quirements to high speed systems where component density re-
quires lower power dissipation. The AD8031/AD8032 are available
in 8-lead plastic DIP and SOIC packages and will operate over the
industrial temperature range of –40
°
C to +85
°
C. The AD8031A is
also available in the space-saving 5-lead SOT-23-5 package and the
AD8032A is available in the 8-lead
μ
SOIC package.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AD8031_06 | 制造商:AD 制造商全稱:Analog Devices 功能描述:2.7 V, 800 レA, 80 MHz Rail-to-Rail I/O Amplifiers |
| AD8031A | 制造商:AD 制造商全稱:Analog Devices 功能描述:2.7 V, 800 uA, 80 MHz Rail-to-Rail I/O Amplifiers |
| AD8031AN | 制造商:Rochester Electronics LLC 功能描述:PDIP SINGLE LOW POWER OP AMP - Bulk 制造商:Analog Devices 功能描述:IC SM AMP LOW POWER RRI/O |
| AD8031ANZ | 功能描述:IC OPAMP VF R-R LP LDIST 8DIP RoHS:是 類別:集成電路 (IC) >> Linear - Amplifiers - Instrumentation 系列:- 產(chǎn)品培訓(xùn)模塊:Differential Circuit Design Techniques for Communication Applications 標(biāo)準(zhǔn)包裝:1 系列:- 放大器類型:RF/IF 差分 電路數(shù):1 輸出類型:差分 轉(zhuǎn)換速率:9800 V/µs 增益帶寬積:- -3db帶寬:2.9GHz 電流 - 輸入偏壓:3µA 電壓 - 輸入偏移:- 電流 - 電源:40mA 電流 - 輸出 / 通道:- 電壓 - 電源，單路/雙路(±):3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 安裝類型:表面貼裝 封裝/外殼:16-VQFN 裸露焊盤，CSP 供應(yīng)商設(shè)備封裝:16-LFCSP-VQ 包裝:剪切帶 (CT) 產(chǎn)品目錄頁面:551 (CN2011-ZH PDF) 其它名稱:ADL5561ACPZ-R7CT |
| AD8031ANZ | 制造商:Analog Devices 功能描述:Operational Amplifier (Op-Amp) IC |
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