參數(shù)資料
型號(hào): AD8012ARZ-REEL7
廠商: Analog Devices Inc
文件頁數(shù): 13/17頁
文件大?。?/td> 0K
描述: IC OPAMP CF DUAL LP 125MA 8SOIC
標(biāo)準(zhǔn)包裝: 1,000
放大器類型: 電流反饋
電路數(shù): 2
轉(zhuǎn)換速率: 2250 V/µs
-3db帶寬: 350MHz
電流 - 輸入偏壓: 3µA
電壓 - 輸入偏移: 1500µV
電流 - 電源: 1.7mA
電流 - 輸出 / 通道: 125mA
電壓 - 電源,單路/雙路(±): 3 V ~ 12 V,±1.5 V ~ 6 V
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 8-SOIC(0.154",3.90mm 寬)
供應(yīng)商設(shè)備封裝: 8-SO
包裝: 帶卷 (TR)
REV. B
–4–
AD8012
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the AD8012
is limited by the associated rise in junction temperature. The maxi-
mum safe junction temperature for plastic encapsulated devices
is determined by the glass transition temperature of the plastic,
approximately +150
°C. Temporarily exceeding this limit may
cause a shift in parametric performance due to a change in the
stresses exerted on the die by the package. Exceeding a junction
temperature of +175
°C for an extended period can result in
device failure.
The output stage of the AD8012 is designed for maximum load
current capability. As a result, shorting the output to common
can cause the AD8012 to source or sink 500 mA. To ensure
proper operation, it is necessary to observe the maximum power
derating curves. Direct connection of the output to either power
supply rail can destroy the device.
AMBIENT TEMPERATURE – C
–50
0
TJ = 150 C
2.0
1.5
1.0
MAXIMUM
POWER
DISSIPATION
W
8-LEAD SOIC
PACKAGE
–40 –30
010
20
3040 50
6070
80 90
8-LEAD
MSOP
0.5
–20 –10
Figure 3. Plot of Maximum Power Dissipation vs.
Temperature for AD8012
0.1 F
10 F
RL
VIN
VOUT
750
49.9
+VS
–VS
+
Test Circuit 1. Gain = +2
0.1 F
10 F
RL
VIN
VOUT
750
53.6
+VS
–VS
+
Test Circuit 2. Gain = –1
Test Circuits
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