參數(shù)資料
型號(hào): AD8011ARZ-REEL7
廠商: Analog Devices Inc
文件頁(yè)數(shù): 13/17頁(yè)
文件大?。?/td> 0K
描述: IC OPAMP CF LP LDIST 30MA 8SOIC
標(biāo)準(zhǔn)包裝: 1
放大器類(lèi)型: 電流反饋
電路數(shù): 1
轉(zhuǎn)換速率: 3500 V/µs
-3db帶寬: 400MHz
電流 - 輸入偏壓: 5µA
電壓 - 輸入偏移: 2000µV
電流 - 電源: 1.3mA
電流 - 輸出 / 通道: 30mA
電壓 - 電源,單路/雙路(±): 3 V ~ 12 V,±1.5 V ~ 6 V
工作溫度: -40°C ~ 85°C
安裝類(lèi)型: 表面貼裝
封裝/外殼: 8-SOIC(0.154",3.90mm 寬)
供應(yīng)商設(shè)備封裝: 8-SOIC
包裝: 標(biāo)準(zhǔn)包裝
其它名稱: AD8011ARZ-REEL7DKR
REV. C
–4–
AD8011
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although the
AD8011 features proprietary ESD protection circuitry, permanent damage may occur on devices
subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended
to avoid performance degradation or loss of functionality.
ABSOLUTE MAXIMUM RATINGS
1
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.6 V
Internal Power Dissipation
2
Plastic DIP Package (N) . . . . . . . Observe Derating Curves
Small Outline Package (R) . . . . . . Observe Derating Curves
Input Voltage (Common Mode) . . . . . . . . . . . . . . . . . . . .
±VS
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . .
±2.5 V
Output Short-Circuit Duration
. . . . . . . . . . . . . . . . . .Observe Power Derating Curves
Storage Temperature Range (N, R) . . . . . . . –65
°C to +125°C
Operating Temperature Range (A Grade) . . . –40
°C to +85°C
Lead Temperature Range (Soldering 10 sec) . . . . . . . . . 300
°C
NOTES
1 Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
2 Specification is for device in free air:
8-Lead PDIP Package: JA = 90
°C/W
8-Lead SOIC Package: JA = 155
°C/W
2.0
1.5
0.5
–50 –40 –30 –20 –10
0
10
20
30
40
50
60
70
80
90
AMBIENT TEMPERATURE ( C)
1.0
0
MAXIMUM
POWER
DISSIPATION
(W)
TJ = 150 C
8-LEAD PLASTIC DIP PACKAGE
8-LEAD SOIC PACKAGE
Figure 3. Maximum Power Dissipation vs. Temperature
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the AD8011
is limited by the associated rise in junction temperature. The
maximum safe junction temperature for plastic encapsulated
devices is determined by the glass transition temperature of the
plastic, approximately 150
°C. Exceeding this limit temporarily
may cause a shift in parametric performance due to a change in
the stresses exerted on the die by the package. Exceeding a
junction temperature of 175
°C for an extended period can result
in device failure.
While the AD8011 is internally short-circuit protected, this may
not be sufficient to guarantee that the maximum junction tem-
perature is not exceeded under all conditions. To ensure proper
operation, it is necessary to observe the maximum power derating
curves (shown in Figure 3).
0.01 F
10 F
RL
1k
50
VIN
VOUT
+VS
–VS
Figure 4. Test Circuit; Gain = +2
0.01 F
10 F
RL
1k
VIN
VOUT
+VS
–VS
52.3
Figure 5. Test Circuit; Gain = –1
ORDERING GUIDE
Temperature
Package
Model
Range
Description
Option
AD8011AN
–40
°C to +85°C8-Lead PDIP
N-8
AD8011AR
–40
°C to +85°C
8-Lead SOIC
R-8
AD8011AR-REEL
–40
°C to +85°C
13" Tape and Reel
R-8
AD8011AR-REEL7
–40
°C to +85°C
7" Tape and Reel
R-8
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