TA = 25°C, unless otherwis" />
參數(shù)資料
型號: AD7273BUJZ-500RL7
廠商: Analog Devices Inc
文件頁數(shù): 2/29頁
文件大小: 0K
描述: IC ADC 10BIT 3MSPS TSOT23-8
標準包裝: 1
位數(shù): 10
采樣率(每秒): 3M
數(shù)據(jù)接口: DSP,MICROWIRE?,QSPI?,串行,SPI?
轉(zhuǎn)換器數(shù)目: 1
功率耗散(最大): 18mW
電壓電源: 單電源
工作溫度: -40°C ~ 125°C
安裝類型: 表面貼裝
封裝/外殼: SOT-23-8 薄型,TSOT-23-8
供應商設備封裝: TSOT-23-8
包裝: 標準包裝
輸入數(shù)目和類型: 1 個單端,單極
其它名稱: AD7273BUJZ-500RL7DKR
AD7273/AD7274
Rev. 0 | Page 9 of 28
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
Table 5.
Parameters
Ratings
VDD to AGND/DGND
0.3 V to +6 V
Analog Input Voltage to AGND
0.3 V to VDD + 0.3 V
Digital Input Voltage to DGND
0.3 V to +6 V
Digital Output Voltage to DGND
0.3 V to VDD + 0.3 V
Input Current to Any Pin Except Supplies1
±10 mA
Operating Temperature Range
Commercial (B Grade)
40°C to +125°C
Storage Temperature Range
65°C to +150°C
Junction Temperature
150°C
6-Lead TSOT Package
θJA Thermal Impedance
230°C/W
θJC Thermal Impedance
92°C/W
8-Lead MSOP Package
θJA Thermal Impedance
205.9°C/W
θJC Thermal Impedance
43.74°C/W
Lead Temperature Soldering
Reflow (10 to 30 sec)
255°C
Lead Temperature Soldering
Reflow (10 to 30 sec)
260°C
ESD
1.5 kV
1 Transient currents of up to 100 mA cause SCR latch-up.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
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