參數(shù)資料
型號(hào): AD676KDZ
廠商: Analog Devices Inc
文件頁(yè)數(shù): 12/16頁(yè)
文件大?。?/td> 0K
描述: IC ADC 16BIT SAMPLING 28-CDIP
標(biāo)準(zhǔn)包裝: 1
位數(shù): 16
采樣率(每秒): 100k
數(shù)據(jù)接口: 并聯(lián)
轉(zhuǎn)換器數(shù)目: 2
功率耗散(最大): 480mW
電壓電源: 模擬和數(shù)字,雙 ±
工作溫度: 0°C ~ 70°C
安裝類(lèi)型: 通孔
封裝/外殼: 28-CDIP(0.605",15.37mm)
供應(yīng)商設(shè)備封裝: 28-CDIP
包裝: 管件
輸入數(shù)目和類(lèi)型: 1 個(gè)單端,雙極
AD676
REV. A
–5–
ORDERING GUIDE
Package
Model
Temperature Range
1
S/(N+D)
Max INL
Package Description
Option
2
AD676JD
0
°C to +70°C
85 dB
Ceramic 28-Pin DIP
D-28
AD676KD
0
°C to +70°C
87 dB
±1.5 LSB
Ceramic 28-Pin DIP
D-28
AD676AD
–40
°C to +85°C
85 dB
Ceramic 28-Pin DIP
D-28
AD676BD
–40
°C to +85°C
87 dB
±1.5 LSB
Ceramic 28-Pin DIP
D-28
NOTES
1For details on grade and package offerings screened in accordance with MIL-STD-883, refer to the AD676/883 data sheet.
2D = Ceramic DIP.
ABSOLUTE MAXIMUM RATINGS*
VCC to VEE . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +26.4 V
VDD to DGND . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V
VCC to AGND . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +18 V
VEE to AGND . . . . . . . . . . . . . . . . . . . . . . . . –18 V to +0.3 V
AGND to DGND . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±0.3 V
Digital Inputs to DGND . . . . . . . . . . . . . . . . . . 0 V to +5.5 V
Analog Inputs, VREF to AGND
. . . . . . . . . . . . . . . . . . . . . . . (VCC + 0.3 V) to (VEE – 0.3 V)
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +300
°C, 10 sec
Storage Temperature . . . . . . . . . . . . . . . . . . –65
°C to +150°C
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in
the operational section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
WARNING!
ESD SENSITIVE DEVICE
CAUTION
The AD676 features input protection circuitry consisting of large “distributed” diodes and
polysilicon series resistors to dissipate both high energy discharges (Human Body Model) and fast,
low energy pulses (Charged Device Model). Per Method 3015.2 of MIL-STD-883C, the AD676
has been classified as a Category 1 Device.
Proper ESD precautions are strongly recommended to avoid functional damage or performance
degradation. Charges as high as 4000 volts readily accumulate on the human body and test
equipment, and discharge without detection. Unused devices must be stored in conductive foam
or shunts, and the foam discharged to the destination socket before devices are removed. For further
information on ESD Precaution. Refer to Analog Devices’ ESD Prevention Manual.
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