參數(shù)資料
型號(hào)： AD606JRZ
廠商： Analog Devices Inc
文件頁(yè)數(shù)： 6/12頁(yè)
文件大?。?/td> 0K
描述： IC AMP LOG LP 1.2MA 16SOIC
標(biāo)準(zhǔn)包裝： 1
放大器類型： 對(duì)數(shù)
電路數(shù)： 1
輸出類型： 差分
電流 - 輸入偏壓： 4µA
電流 - 電源： 13mA
電流 - 輸出 / 通道： 1.2mA
電壓 - 電源，單路/雙路(±)： 4.5 V ~ 5.5 V
工作溫度： 0°C ~ 70°C
安裝類型： 表面貼裝
封裝/外殼： 16-SOIC（0.154"，3.90mm 寬）
供應(yīng)商設(shè)備封裝： 16-SOIC
包裝： 管件
AD606
REV. B
–3–
ORDERING GUIDE
Temperature Package
Package
Model
Range
Description
Option
AD606JN
0
°C to +70°C 16-Lead Plastic DIP N-16
AD606JR
0
°C to +70°C 16-Lead Narrow-Body R-16A
SOIC
AD606JR-REEL
0
°C to +70°C 13" Tape and Reel
R-16A
AD606JR-REEL7 0
°C to +70°C 7" Tape and Reel
R-16A
AD606-EB
Evaluation Board
AD606JCHIPS
0
°C to +70°C Die
PIN DESCRIPTION
Plastic DIP (N)
and
Small Outline (R)
Packages
TOP VIEW
(Not to Scale)
16
15
14
13
12
11
10
9
1
2
3
4
5
6
7
8
INLO
INHI
AD606
COMM
ISUM
PRUP
ILOG
VPOS
BFIN
FIL1
VLOG
FIL2
OPCM
LADJ
LMLO
LMHI
ABSOLUTE MAXIMUM RATINGS
1
Supply Voltage VPOS . . . . . . . . . . . . . . . . . . . . . . . . . . . . +9 V
Internal Power Dissipation
2
. . . . . . . . . . . . . . . . . . . 600 mW
Operating Temperature Range . . . . . . . . . . . . . 0
°C to +70°C
Storage Temperature Range . . . . . . . . . . . . –65
°C to +150°C
Lead Temperature Range (Soldering 60 sec) . . . . . . . . +300
°C
NOTES
1Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
2Specification is for device in free air:
16-Lead Plastic DIP Package:
θ
JA = 85°C/W
16-Lead SOIC Package:
θ
JA = 100°C/W
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD606 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
PIN FUNCTION DESCRIPTIONS
Pin Mnemonic Function
1
INLO
DIFFERENTIAL RF INPUT
–75 dBm to +5 dBm, Inverting, AC Coupled.
2
COMM
POWER SUPPLY COMMON
Connect to Ground.
3
ISUM
LOG DETECTOR SUMMING NODE
4
ILOG
LOG CURRENT OUTPUT
Normally No Connection; 2
A/dB Output
Current.
5
BFIN
BUFFER INPUT
Optionally Used to Realize Low Frequency
Post-Demodulation Filters.
6
VLOG
BUFFERED LOG OUTPUT
37.5 mV/dB (100 mV to 4.5 V).
7
OPCM
OUTPUT COMMON
Connect to Ground.
8
LMLO
DIFFERENTIAL LIMITER OUTPUT
1.2 mA Full-Scale Output Current. Open
Collector Output Must Be “Pulled” Up to
VPOS with R
≤ 400 .
9
LMHI
DIFFERENTIAL LIMITER OUTPUT
1.2 mA Full-Scale Output Current. Open
Collector Output Must Be “Pulled” Up to
VPOS with R
≤ 400 .
10
LADJ
LIMITER LEVEL ADJUSTMENT
Optionally Used to Adjust Limiter Output
Current.
11
FIL1
OFFSET LOOP LOW-PASS FILTER
Normally No Connection; a Capacitor Between
FIL1 and FIL2 May Be Added to Lower the
Filter Cutoff Frequency.
12
FIL2
OFFSET LOOP LOW-PASS FILTER
Normally No Connection; See Above.
13
VPOS
POSITIVE SUPPLY
Connect to +5 V at 13 mA.
14
PRUP
POWER UP
CMOS (5 V) Logical High = Device On
(
≈ 65 mW).
CMOS (0 V) Logical Low = Device Off
(
≈ 325 W).
15
COMM
POWER SUPPLY COMMON
Connect to Ground.
16
INHI
DIFFERENTIAL RF INPUT
–75 dBm to +5 dBm, Noninverting, AC-Coupled.
WARNING!
ESD SENSITIVE DEVICE
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