
AD5175
Rev. A | Page 3 of 20
SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
VDD = 2.7 V to 5.5 V, VSS = 0 V; VDD = 2.5 V to 2.75 V, VSS = 2.5 V to 2.75 V; 40°C < TA < +125°C, unless otherwise noted.
Table 1.
Parameter
Symbol
Test Conditions/Comments
Min
Max
Unit
DC CHARACTERISTICS—RHEOSTAT MODE
Resolution
10
Bits
Resistor Integral Nonlinearit
y2, 3R-INL
|VDD VSS| = 3.6 V to 5.5 V
1
+1
LSB
|VDD VSS| = 3.3 V to 3.6 V
1
+1.5
LSB
|VDD VSS| = 2.7 V to 3.3 V
2.5
+2.5
LSB
Resistor Differential Nonlinear
ity2R-DNL
1
+1
LSB
Nominal Resistor Tolerance
±15
%
Code = full scale
35
ppm/°C
Wiper Resistance
Code = zero scale
35
70
Ω
RESISTOR TERMINALS
VTERM
VSS
VDD
V
f = 1 MHz, measured to GND, code = half scale
90
pF
f = 1 MHz, measured to GND, code = half scale
40
pF
Common-Mode Leakage Curr
ent4VA = VW
50
nA
DIGITAL INPUTS
High
VINH
2.0
V
Low
VINL
0.8
V
Input Current
IIN
±1
μA
CIN
5
pF
DIGITAL OUTPUT
High
VOH
RPULL_UP = 2.2 kΩ to VDD
VDD 0.1
V
Low
VOL
RPULL_UP = 2.2 kΩ to VDD
VDD = 2.7 V to 5.5 V, VSS = 0 V
0.4
V
VDD = 2.5 V to 2.75 V, VSS = 2.5 V to 2.75 V
0.6
V
Tristate Leakage Current
1
+1
μA
5
pF
POWER SUPPLIES
Single-Supply Power Range
VSS = 0 V
2.7
5.5
V
Dual-Supply Power Range
±2.5
±2.75
V
Supply Current
Positive
IDD
1
μA
Negative
ISS
1
μA
Positive
IDD_OTP_STORE
4
mA
Negative
ISS_OTP_STORE
4
mA
Positive
IDD_OTP_READ
500
μA
Negative
ISS_OTP_READ
500
μA
PDISS
VIH = VDD or VIL = GND
5.5
μW
Power Supply Rejection Ra
tio4PSRR
ΔVDD/ΔVSS = ±5 V ± 10%
50
55
dB