參數(shù)資料
型號: AD5160BRJZ10-RL7
廠商: Analog Devices Inc
文件頁數(shù): 4/16頁
文件大?。?/td> 0K
描述: IC POT DGTL SPI 256POS SOT23-8
標準包裝: 1
接片: 256
電阻(歐姆): 10k
電路數(shù): 1
溫度系數(shù): 標準值 45 ppm/°C
存儲器類型: 易失
接口: 3 線串行(芯片選擇)
電源電壓: 2.7 V ~ 5.5 V
工作溫度: -40°C ~ 125°C
安裝類型: 表面貼裝
封裝/外殼: SOT-23-8
供應商設備封裝: SOT-23-8
包裝: 標準包裝
產(chǎn)品目錄頁面: 786 (CN2011-ZH PDF)
其它名稱: AD5160BRJZ10-RL7DKR
AD5160
Rev. B | Page 12 of 1
6
TEST CIRCUITS
Figure 28 to Figure 36 illustrate the test circuits that define the test conditions used in the product specification tables.
VMS
A
W
DUT
B
V+ = VDD
1LSB = V+/2N
V+
Figure 28. Test Circuit for Potentiometer Divider Nonlinearity Error (INL, DNL)
NO CONNECT
IW
VMS
A
W
B
DUT
Figure 29. Test Circuit for Resistor Position Nonlinearity Error
(Rheostat Operation; R-INL, R-DNL)
VMS1
IW = VDD/RNOMINAL
VMS2
VW
RW = [VMS1 – VMS2]/IW
A
W
DUT
B
Figure 30. Test Circuit for Wiper Resistance
ΔV
ΔVMS%
DD%
PSS (%/%) =
V+= VDD 10%
PSRR (dB) = 20 LOG
MS
DD
(
)
VDD
VA
VMS
A
W
B
V+
Figure 31. Test Circuit for Power Supply Sensitivity (PSS, PSSR)
OP279
W
5V
B
VOUT
OFFSET
A
DUT
GND
OFFSET
BIAS
VIN
Figure 32. Test Circuit for Inverting Gain
B
A
VIN
OP279
W
5V
VOUT
OFFSET
GND
OFFSET
BIAS
DUT
Figure 33. Test Circuit for Noninverting Gain
+15V
–15V
W
A
2.5V
B
VOUT
OFFSET
GND
DUT
AD8610
VIN
Figure 34. Test Circuit for Gain vs. Frequency
W
B
VSS TO VDD
DUT
ISW
CODE = 0x00
RSW =
0.1V
ISW
0.1V
Figure 35. Test Circuit for Incremental On Resistance
W
B
VCM
ICM
A
NC
VDD DUT
GND
NC
VSS
NC = NO CONNECT
Figure 36. Test Circuit for Common-Mode Leakage Current
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