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參數(shù)資料
| 型號： | AD5116BCPZ80-RL7 |
| 廠商： | Analog Devices Inc |
| 文件頁數(shù)： | 12/16頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC DGTL POT 64POS 80K 8LFCSP |
| 標準包裝： | 3,000 |
| 接片： | 64 |
| 電阻（歐姆）： | 80k |
| 電路數(shù)： | 1 |
| 溫度系數(shù)： | 標準值 35 ppm/°C |
| 存儲器類型： | 非易失 |
| 接口： | 2 線按鈕 |
| 電源電壓： | 2.3 V ~ 5.5 V |
| 工作溫度： | -40°C ~ 125°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 8-UFDFN 裸露焊盤，CSP |
| 供應(yīng)商設(shè)備封裝： | 8-LFCSP-UD（2x2） |
| 包裝： | 帶卷 (TR) |
Data Sheet
AD5116
Rev. B | Page 5 of 16
INTERFACE TIMING SPECIFICATIONS
VDD = 2.3 V to 5.5 V; all specifications TMIN to TMAX, unless otherwise noted.
Table 3.
Parameter
Test Conditions/Comments
Min
Typ
Max
Unit
Description
t
1
8
ms
Debounce time
t
2
1
sec
Manual to auto scan time
t
3
140
ms
Auto scan step
t
4
ASE = 0 V, PD = GND, PU = GND
1
sec
Auto save execute time
t
5
ASE = VDD
8
ms
Low pulse time to manual storage
t
EEPROM_PROGRAM
15
50
ms
Memory program time
t
POWER_UP
50
s
Power-on EEPROM restore time
1 EEPROM program time depends on the temperature and EEPROM write cycles. Higher timing is expected at a lower temperature and higher write cycles.
2 Maximum time after V
DD is equal to 2.3 V.
TIMING DIAGRAMS
09657-
002
PU
RW
t1
PD (LOW)
Figure 2. Manual Increment Mode Timing
09657-
003
PU
t1
t2
t3
PD (LOW)
RW
Figure 3. Auto Increment Mode Timing
09657-
004
PD
t1
t4
EEPROM
DATA
NEW DATA
tEEPROM
PROGRAM
RW
ASE (LOW)
Figure 4. Auto Save Mode Timing
09657-
005
PD/PU (LOW)
t5
EEPROM
DATA
NEW DATA
tEEPROM
PROGRAM
ASE
Figure 5. Manual Save Mode Timing
09657-
006
PD
t1
RW
RW = 45
ASE
Figure 6. End Scale Indication Timing
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