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參數(shù)資料
| 型號(hào)： | ACT-S512K8N-045F4T |
| 廠商： | Aeroflex Inc. |
| 英文描述： | ACT-S512K8 High Speed 4 Megabit Monolithic SRAM |
| 中文描述： | 行為S512K8高速SRAM的4兆位單片 |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大小： | 83K |
| 代理商： | ACT-S512K8N-045F4T |
CIRCUIT TECHNOLOGY
www.aeroflex.com
eroflex Circuit Technology - Advanced Multichip Modules SCD1664 REV C 5/10/00
General Description
The ACT–S512K8 is a high
speed,
4
Megabit
Monolithic SRAM designed for
full temperature range military,
space, or high reliability mass
memory
and
applications.
The MCM is input and output
TTL compatible. Writing is
executed
when
enable (WE) and chip enable
(CE) inputs are low and output
enable (OE) is high. Reading is
accomplished when WE is high
and CE and OE are both low.
Access time grades of 17ns,
20ns, 25ns, 35ns, 45ns and
55ns maximum are standard.
The +5 Volt power supply
version is standard and +3.3
Volt lower power model is a
future optional product.
The products are designed
for
operation
temperature range of -55°C to
+125°C and under the full
military environment. A DESC
Standard
Military
(SMD) number is released.
The
ACT-S512K8
manufactured
80,000
square
MIL-PRF-38534
facility in Plainview, N.Y.
CMOS
fast
cache
the
write
over
the
Drawing
is
in
Aeroflex’s
foot
certified
512Kx8
OE
A
0
–
A
18
I/O
0-7
8
WE
CE
Pin Description
I/O
0-7
Data I/O
A
0–18
Address Inputs
WE
Write Enable
CE
Chip Enable
OE
Output Enable
V
CC
Power Supply
V
SS
Ground
NC
Not Connected
V
ss
V
cc
Block
Diagram – Flat Package(F3,F16), DIP(P4) & CSOJ(F4)
Features
I
Low Power Monolithic CMOS 512K x 8 SRAM
I
Full Military (-55°C to +125°C) Temperature Range
I
Input and Output TTL Compatible Design
I
Fast 17,20,25,35,45 & 55ns Maximum Access Times
I
+5 V Power Supply
I
MIL-PRF-38534 Compliant MCMs Available
I
Industry Standard Pinouts
I
Packaging – Hermetic Ceramic
G
36 Lead, .92" x .51" x .13" Flat Package (FP), Aeroflex code# "F3"
G
36 Lead, .92" x .43" x .184" Small Outline J lead (CSOJ),
Aeroflex code# "F4"
(.155 MAX thickness available, contact factory for details)
G
32 Lead, 1.6" x .60" x .20" Dual-in-line (DIP), Aeroflex code# "P4"
I
DESC SMD# 5962–95613 Released(F3,F4,P4)
ACT–S512K8 High Speed
4 Megabit Monolithic SRAM
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ACT-S512K8N-045P4C | ACT-S512K8 High Speed 4 Megabit Monolithic SRAM |
| ACT-S512K8N-045P4M | ACT-S512K8 High Speed 4 Megabit Monolithic SRAM |
| ACT-S512K8N-045P4T | ACT-S512K8 High Speed 4 Megabit Monolithic SRAM |
| ACTS512K8 | ACT-S512K8 High Speed 4 Megabit Monolithic SRAM |
| ACT-S512K8N-035P4C | ACT-S512K8 High Speed 4 Megabit Monolithic SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ACTS541D | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened Octal Three-State Buffer/Line Driver |
| ACTS541DTR-02 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened Octal Three-State Buffer/Line Driver |
| ACTS541HMSR | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened Octal Three-State Buffer/Line Driver |
| ACTS541K | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened Octal Three-State Buffer/Line Driver |
| ACTS541KTR-02 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened Octal Three-State Buffer/Line Driver |
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