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參數(shù)資料
| 型號(hào)： | AB1L3N |
| 廠商： | NEC Corp. |
| 英文描述： | JT 55C 55#22D PIN RECP |
| 中文描述： | 片上NPN硅外延電阻晶體管 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大小： | 85K |
| 代理商： | AB1L3N |
2002
Document No. D10836EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
COMPOUND TRANSISTOR
AB1 SERIES
on-chip resistor NPN silicon epitaxial transistor
For mid-speed switching
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
FEATURES
Current drive available up to 0.7 A
On-chip bias resistor
Low power consumption during drive
AB1 SERIES LISTS
Products
R
1
(K
)
R
2
(K
)
AB1A4A
10
AB1L2Q
0.47
4.7
AB1A3M
1.0
1.0
AB1F3P
2.2
10
AB1J3P
3.3
10
AB1L3N
4.7
10
AB1A4M
10
10
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°
C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
30
V
Collector to emitter voltage
V
CEO
25
V
Emitter to base voltage
V
EBO
10
V
Collector current (DC)
I
C(DC)
0.7
A
Collector current (Pulse)
I
C(pulse)
*
1.0
A
Base current (DC)
I
B(DC)
0.02
A
Total power dissipation
P
T
750
mW
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
55 to +150
°
C
* PW
≤
10 ms, duty cycle
≤
50 %
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