參數(shù)資料
型號: AAT3680ITP-8.4-T1
廠商: Advanced Analogic Technologies, Inc.
英文描述: Lithium-Ion Linear Battery Charge Controller
中文描述: 鋰離子線性電池充電控制器
文件頁數(shù): 11/18頁
文件大?。?/td> 265K
代理商: AAT3680ITP-8.4-T1
AAT3680
Lithium-Ion Linear Battery Charge Controller
3680.2003.4.0.91
11
P
D
= (V
P(MAX)
- V
CS
- V
D
- V
MIN
) · I
CHARGE(REG)
P
D
= (5.5V - 0.1V - 0.4V - 3.1V) · 750mA
P
D
= 1.4W
2. The next step is to determine which size package
is needed to keep the junction temperature below its
rated value, T
J(MAX)
. Using this value, and the maxi-
mum ambient temperature inside the system T
A(MAX)
,
calculate the thermal resistance R
θ
JA
required:
R
θ
JA
= (T
J(MAX)
- T
A(MAX)
)
P
D
R
θ
JA
= (150 - 40)
1.4
R
θ
JA
= 79°C/W
It is recommended to choose a package with a lower
R
θ
JA
than the number calculated above. A SOT223
package would be an acceptable choice, as it has an
R
θ
JA
of 62.5°C/W when mounted to a PCB with ade-
quately sized copper pad soldered to the heat tab.
3. Choose a drain-source (V
DS
) voltage rating
greater than the input voltage. In this example, V
P
is 5.0V, so a 12V device is acceptable.
4. Choose a MOSFET with a drain current rating at
least 50% greater than the programmed
I
CHARGE(REG)
value. In this example we would
select a device with at least 1.125A rating.
5. Calculate the required threshold voltage to deliv-
er I
CHARGE(REG)
:
V
GS
= (V
CS
+ V
OL@DRV
) - V
P(MIN)
V
GS
= (0.1V + 0.1V) - 4.5V
V
GS
= -4.3V
where V
GS
is the available gate to source voltage pro-
vided by the AAT3680, V
CS
is the voltage across the
sense resistor, V
OL@DRV
is the rated low voltage at the
DRV pin, and V
P(MIN)
is the worst case input voltage
(assuming 10% tolerance on the 5V supply). Choose
a MOSFET device with sufficiently low V
GS(TH)
so the
device will conduct the desired I
CHARGE(REG)
.
6. Calculate the worst case maximum allowable
R
DS(ON)
at worst case V
GS
voltage:
R
DS(ON)
= (V
P(MIN)
- V
CS(MAX)
- V
BAT(MAX)
)
I
CHARGE(REG)
R
DS(ON)
= (4.5V - 0.11V - 4.242V)
0.75A
R
DS(ON)
= 197m
Select a P-Channel Power MOSFET with R
DS(ON)
lower than 197m
at V
GS
= -4.3V.
In summary, select a P-Channel MOSFETwith ratings
V
DS
12V, R
θ
JA
79°C/W and R
DS(ON)
197m
at
V
GS
= -4.3V in a SOT223 (or better thermal) package.
Figure 5: Typical Applications Schematic Using P-Channel Power MOSFET
Q1
RFD10P03L
AAT3680
C2
10
μ
F
C1
4.7
μ
F
R2
1k
R
SENSE
0.2
R1
1k
R4
100k
BATT+
BATT-
TEMP
RT1
RT2
VP
Battery
Pack
DRV
CSI
VP
VP
VSS
STAT
TS
BAT
T2X
D1
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