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參數(shù)資料
| 型號(hào)： | AA028N2-00 |
| 廠商： | SKYWORKS SOLUTIONS INC |
| 元件分類(lèi)： | 放大器 |
| 英文描述： | 25000 MHz - 32000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | DIE |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 152K |
| 代理商： | AA028N2-00 |
Skyworks Solutions, Inc. [978] 241-7000
Fax [978] 241-7906 Email sales@skyworksinc.com www.skyworksinc.com
1
Specifications subject to change without notice. 12/02A
25–32 GHz GaAs MMIC
Low Noise Pre-Amplifier
Features
■ Single Bias Supply Operation (3.5 V or 5 V)
■ 2.5 dB Typical Noise Figure at 26 GHz
■ 28 dB Typical Small Signal Gain
■ 100% On-Wafer RF, DC and Noise
Figure Testing
■ 100% Visual Inspection to MIL-STD-883
MT 2010
■ Ideal for Ka Band SatCom and Point to
Multi-Point Applications
Chip Outline
AA028N2-00
Description
Skyworks’ four-stage, reactively-matched GaAs MMIC
amplifier has a typical small signal gain of 28 dB with a
typical noise figure of 2.5 dB with P1 dB > 14 dBm at
26 GHz. The device is ideal for Ka band SatCom and point
to multi-point applications. The FETs employ surface
passivation to ensure a rugged, reliable part with
through-substrate via holes and gold-based backside
metallization to facilitate a conductive epoxy or solder die
attach process. The RF interface has been designed for
high volume automatic bonding assembly, allowing for
(2) 1.0 mil Au wire. All chips are screened for
S-parameters, output power and noise figure prior to
shipment for guaranteed performance.
Parameter
Condition
Symbol
Min.
Typ.3
Max.
Unit
Drain Current
IDS
245
275
mA
Small Signal Gain
F = 25–31 GHz
G
27
28
dB
Noise Figure
F = 26 GHz
NF
2.5
3.0
dB
Input Return Loss
F = 25–31 GHz
RLI
-9
-6
dB
Output Return Loss
F = 25–31 GHz
RLO
-12
-6
dB
Output Power at 1 dB Gain Compression1
F = 26 GHz
P1 dB
14
dBm
Two-Tone Output Third-Order Intercept1
F = 28 GHz
OIP3
21
dBm
Thermal Resistance2
ΘJC
TBD
°C/W
Electrical Specifications at 25°C (VDS = 3.5 V or 5 V)4
0.088
(2.24
mm)
0.004
(0.10 mm)
SQ TYP.
0.000
0.018
(0.46
mm)
0.046
(1.17
mm)
0.059
(1.50
mm)
0.078
(1.98
mm)
0.091
(2.31
mm)
0.000
0.033
(0.84 mm)
0.057
(1.45 mm)
0.003
(0.08 mm)
0.054
(1.37 mm)
0.003
(0.08
mm)
0.031
(0.79
mm)
0.043
(1.09
mm)
0.088
(2.24
mm)
Characteristic
Value
Operating Temperature (TC)
-55°C to +90°C
Storage Temperature (TST)
-65°C to +150°C
Bias Voltage (VD)6 VDC
Power In (PIN)
10 dBm
Junction Temperature (TJ)
175°C
Absolute Maximum Ratings
1. Not measured on a 100% basis.
2. Calculated value based on measurement of discrete FET.
3. Typical represents the median parameter value across the specified
frequency range for the median chip.
4. 3.5 V is applied to VD1 pad, or 5 V is applied to VD2 pad.
Preliminary
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