參數(shù)資料
型號: A64S16161
廠商: AMIC Technology Corporation
英文描述: 2M X 16 Bit Low Voltage Super RAM
中文描述: 2米x 16位低電壓超內(nèi)存
文件頁數(shù): 1/16頁
文件大?。?/td> 240K
代理商: A64S16161
A64S16161
2M X 16 Bit Low Voltage Super RAM
Preliminary
PRELIMINARY (December, 2003, Version 0.0)
1
AMIC Technology Corp.
Features
Memory Cell : Dynamic memory( DRAM )
Refresh: Completely free
Power Down: Control by CS2( No Data Retention )
Byte Control : Capable of single byte operation
Power Consumption: 100
μ
A( Standby Current )
Operating Temperature Range: -40’C~+85’C
Composition:2,097,152 Word X 16 Bit
Supply Power Voltage:2.70V to 3.30V
Access Time: 70nS
Access Time ( Page Access Read ): 30nS
I/O Terminal :Input / Output Common 3-state output
Pin Description
Description
A64S16161 is a virtually static RAM, which uses DRAM type memory cells, but it has refresh transparency, so that you need
not to imply refresh operation. Furthermore the interface is completely compatible to a low power Asynchronous type SRAM, you
can operate as same as the Asynchronous SRAM.
A64S16161 is a 2,097,152 Words X 16 bit asynchronous random access memory on a monolithic CMOS chip with
marvelous low power consumption technology. Its low power and also low noise makes it ideal for mobile applications.
Pin Name
Description
CS1#
Chip select 1 ( Low Active )
CS2
Chip select 2 ( High Active )
WE#
Write enable ( Low Active )
OE#
Output enable ( Low Active )
A0 to A20
Address Input ( A0 to A2 : Page Address)
IO0-7
Lower Byte Input / Output
IO8-15
Upper Byte Input / Output
LB#
Lower Byte Control ( Low Active )
UB#
Upper Byte Control ( Low Active )
VCC
Power Supply
VSS
Ground ( 0V)
LB#
OE#
A0
A1
A2
CE2
DQ8
UB#
A3
A4
CE1#
DQ0
DQ9
DQ10
A5
A6
DQ1
DQ2
VSS
DQ11
A17
A7
DQ3
VCC
VCC
DQ12
NC
A16
DQ4
VSS
DQ14
DQ13
A14
A15
DQ5
DQ6
DQ15
A19
A12
A13
WE#
DQ7
A18
A8
A9
A10
A11
A20
A
D
E
F
G
H
C
B
1 2 3 4 5 6
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