參數(shù)資料
型號： A62S7316V-70SI
廠商： AMIC Technology Corporation
元件分類： DRAM
英文描述： 128K X 16 BIT LOW VOLTAGE CMOS SRAM
中文描述： 128K的× 16位低電壓CMOS的SRAM
文件頁數(shù)： 5/15頁
文件大?。?/td> 144K
代理商： A62S7316V-70SI
A62S7316 Series
PRELIMINARY
(March, 2001, Version 0.2)
4
AMIC Technology, Inc.
Absolute Maximum Ratings*
VCC to GND . . . . . . . . . . . . . . . . . . . . . -0.5V to +4.6V
IN, IN/OUT Volt to GND . . . . . . . . -0.5V to VCC + 0.5V
Operating Temperature, Topr . . . . . . . . -25
°
C to +85
°
C
Storage Temperature, Tstg . . . . . . . . . -55
°
C to +125
°
C
Power Dissipation, P
T
. . . . . . . . . . . . . . . . . . . . . 0.7W
Soldering Temp. & Time . . . . . . . . . . . . 260
°
C, 10 sec
DC Electrical Characteristics
(T
A
= 0
°
C to + 70
°
C or -25
°
C to 85
°
C, VCC = 2.7V to 3.6V, GND = 0V)
*Comments
Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to this device.
These are stress ratings only. Functional operation of this
device at these or any other conditions above those
indicated in the operational sections of this specification
is not implied or intended. Exposure to the absolute
maximum rating conditions for extended periods may
affect device reliability.
Symbol
Parameter
A62S7316-55S/70S
A62S7316-55SI/70SI
Unit
Conditions
Min.
Max.
Min.
Max.
I
LI
Input Leakage Current
-
1
-
1
μ
A
V
IN
= GND to VCC
I
LO
Output Leakage Current
-
1
-
1
μ
A
CE = V
IH
or LB = V
IH
or
HB = V
IH
or OE = V
IH
or
WE = V
IH
V
I/O
= GND to VCC
I
CC
Active Power Supply Current
-
5
-
5
mA
CE = V
IL
, I
I/O
= 0mA
I
CC1
-
50
-
50
mA
Min. Cycle, Duty = 100%
CE = V
IL
, I
I/O
= 0mA
I
CC2
Dynamic Operating
Current
-
10
-
10
mA
CE = V
IL
, V
IH
= VCC,
V
IL
= 0V, f = 1MHz,
I
I/O
= 0 mA
I
SB
-
0.5
-
0.5
mA
CE = V
IH
I
SB1
Standby Power
Supply Current
-
10
-
15
μ
A
CE
≥
VCC - 0.2V
V
IN
≥
0V
V
OL
Output Low Voltage
-
0.4
-
0.4
V
I
OL
= 2.1mA
V
OH
Output High Voltage
2.2
-
2.2
-
V
I
OH
= -1.0mA
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