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參數(shù)資料
| 型號： | A62S7308BX-70SI |
| 廠商： | AMIC Technology Corporation |
| 英文描述： | ER 26C 26#16 SKT PLUG |
| 中文描述： | 128K的× 8位低電壓CMOS的SRAM |
| 文件頁數(shù)： | 10/17頁 |
| 文件大?。?/td> | 277K |
| 代理商： | A62S7308BX-70SI |
Timing Waveforms (continued)
Write Cycle 2
(6)
(Chip Enable Controlled)
A62S7308B Series
PRELIMINARY
(March, 2001, Version 0.2)
9
AMIC Technology, Inc.
t
WC
Address
CE1
CE2
D
IN
t
DH
t
DW
(4)
(4)
t
CW5
t
AW
t
WR3
WE
D
OUT
t
WHZ7
t
WP2
t
CW5
t
AS1
Notes: 1. t
AS
is measured from the address valid to the beginning of Write.
2. A Write occurs during the overlap (t
WP
) of a low
CE1
, a high CE2 and a low
WE
.
3. t
WR
is measured from the earliest of
CE1
or
WE
going high or CE2 going low to the end of the Write cycle.
4. If the
CE1
low transition or the CE2 high transition occurs simultaneously with the
WE
low transition or after
the
WE
transition, outputs remain in a high impedance state.
5. t
CW
is measured from the later of
CE1
going low or CE2 going high to the end of Write.
6.
OE
is continuously low. (
OE
= V
IL
)
7. Transition is measured
±
500mV from steady state. This parameter is sampled and not 100% tested.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| A62S7308B | 128K X 8 BIT LOW VOLTAGE CMOS SRAM |
| A62S7316 | 128K X 16 BIT LOW VOLTAGE CMOS SRAM |
| A62S7316G-55S | 128K X 16 BIT LOW VOLTAGE CMOS SRAM |
| A62S7316G-55SI | 128K X 16 BIT LOW VOLTAGE CMOS SRAM |
| A62S7316G-70S | 128K X 16 BIT LOW VOLTAGE CMOS SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| A62S7316 | 制造商:AMICC 制造商全稱:AMIC Technology 功能描述:128K X 16 BIT LOW VOLTAGE CMOS SRAM |
| A62S7316G-55S | 制造商:AMICC 制造商全稱:AMIC Technology 功能描述:128K X 16 BIT LOW VOLTAGE CMOS SRAM |
| A62S7316G-55SI | 制造商:AMICC 制造商全稱:AMIC Technology 功能描述:128K X 16 BIT LOW VOLTAGE CMOS SRAM |
| A62S7316G-70S | 制造商:AMICC 制造商全稱:AMIC Technology 功能描述:128K X 16 BIT LOW VOLTAGE CMOS SRAM |
| A62S7316G-70SI | 制造商:AMICC 制造商全稱:AMIC Technology 功能描述:128K X 16 BIT LOW VOLTAGE CMOS SRAM |
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