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參數(shù)資料
| 型號(hào)： | A62S7308BV-70SI |
| 廠商： | AMIC Technology Corporation |
| 英文描述： | 128K X 8 BIT LOW VOLTAGE CMOS SRAM |
| 中文描述： | 128K的× 8位低電壓CMOS的SRAM |
| 文件頁數(shù)： | 4/17頁 |
| 文件大小： | 277K |
| 代理商： | A62S7308BV-70SI |
A62S7308B Series
PRELIMINARY
(March, 2001, Version 0.2)
3
AMIC Technology, Inc.
Recommended DC Operating Conditions
(T
A
= 0
°
C to + 70
°
C or -25
°
C to 85
°
C)
Symbol
Parameter
Min.
Typ.
Max.
Unit
VCC
Supply Voltage
2.7
3.0
3.6
V
GND
Ground
0
0
0
V
V
IH
Input High Voltage
2.4
-
VCC + 0.3
V
V
IL
Input Low Voltage
-0.3
-
+0.6
V
C
L
Output Load
-
-
30
pF
TTL
Output Load
-
-
1
-
Absolute Maximum Ratings*
VCC to GND . . . . . . . . . . . . . . . . . . . . . -0.5V to + 4.6V
IN, IN/OUT Volt to GND . . . . . . . . . -0.5V to VCC + 0.5V
Operating Temperature, Topr . . . . . . . . -25
°
C to + 85
°
C
Storage Temperature, Tstg . .. . . . . . . . -55
°
C to + 125
°
C
Power Dissipation, P
T
. . . . . . . . . . . . . . . . . . . . . . 0.7W
Soldering Temp. & Time . . . . . . . . . . . . . 260
°
C, 10 sec
*Comments
Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to this device.
These are stress ratings only. Functional operation of
this device at these or any other conditions above those
indicated in the operational sections of this specification
is not implied or intended. Exposure to the absolute
maximum rating conditions for extended periods may
affect device reliability.
DC Electrical Characteristics
(T
A
= 0
°
C to + 70
°
C or -25
°
C to 85
°
C, VCC = 2.7V to 3.6V, GND = 0V)
Symbol
Parameter
A62S7308B-55S/70S
A62S7308B-55SI/70SI
Unit
Conditions
Min.
Max.
Min.
Max.
I
LI
Input Leakage
Current
-
1
-
1
μ
A
V
IN
= GND to VCC
I
LO
Output Leakage
Current
-
1
-
1
μ
A
CE1
= V
IH
or CE2 = V
IL
or
OE
= V
IH
or
WE
= V
IL
V
I/O
= GND to VCC
I
CC
Active Power Supply
Current
-
3
-
3
mA
CE1
= V
IL
, CE2 = V
IH
I
I/O
= 0mA
I
CC1
Dynamic Operating
Current
-
30
-
30
mA
Min. Cycle, Duty = 100%
CE1
= V
IL
, CE2 = V
IH
I
I/O
= 0mA
I
CC2
Dynamic Operating
Current
-
3
-
3
mA
CE1
= V
IL
, CE2 = V
IH
V
IH
= VCC
, V
IL
= 0V
F = 1MHz,
I
I/O
= 0mA
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