參數(shù)資料
型號(hào)： A62S6308M-10SI
廠商： AMIC Technology Corporation
英文描述： 64K X 8 BIT LOW VOLTAGE CMOS SRAM
中文描述： 64K的× 8位低電壓CMOS的SRAM
文件頁(yè)數(shù)： 4/17頁(yè)
文件大?。?/td> 179K
代理商： A62S6308M-10SI
A62S6308 Series
(October, 1998, Version 2.0)
3
AMIC Technology, Inc.
Recommended DC Operating Conditions
(T
A
= 0
°
C to + 70
°
C, -25
°
C to 85
°
C)
Symbol
Parameter
Min.
Typ.
Max.
Unit
VCC
Supply Voltage
2.7
3.0
3.6
V
GND
Ground
0
0
0
V
V
IH
Input High Voltage
2.0
-
VCC + 0.3
V
V
IL
Input Low Voltage
-0.3
-
+0.6
V
C
L
Output Load
-
-
30
pF
TTL
Output Load
-
-
1
-
Absolute Maximum Ratings*
VCC to GND . . . . . . . . . . . . . . . . . . . . . -0.5V to + 4.6V
IN, IN/OUT Volt to GND . . . . . . . . . -0.5V to VCC + 0.5V
Operating Temperature, Topr . . . . . . . . -25
°
C to + 85
°
C
Storage Temperature, Tstg . .. . . . . . . . -55
°
C to + 125
°
C
Power Dissipation, P
T
. . . . . . . . . . . . . . . . . . . . . . 0.7W
Soldering Temp. & Time . . . . . . . . . . . . . 260
°
C, 10 sec
*Comments
Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to this device.
These are stress ratings only. Functional operation of this
device at these or any other conditions above those
indicated in the operational sections of this specification
is not implied or intended. Exposure to the absolute
maximum rating conditions for extended periods may
affect device reliability.
DC Electrical Characteristics
(T
A
= 0
°
C to + 70
°
C or -25
°
C to 85
°
C, VCC = 2.7V to 3.6V, GND = 0V)
Symbol
Parameter
A62S6308-70S/10S
A62S6308-70SI/10SI
Unit
Conditions
Min.
Max.
Min.
Max.
I
LI
Input Leakage
Current
-
1
-
1
μ
A
V
IN
= GND to VCC
I
LO
Output Leakage
Current
-
1
-
1
μ
A
CE1 = V
IH
or CE2 = V
IL
or
OE = V
IH
or WE = V
IL
V
I/O
= GND to VCC
I
CC
Active Power
Supply Current
-
3
-
3
mA
CE1 = V
IL
, CE2 = V
IH
I
I/O
= 0mA
I
CC1
Dynamic Operating
Current
-
40
-
40
mA
Min. Cycle, Duty = 100%
CE1 = V
IL
, CE2 = V
IH
I
I/O
= 0mA
I
CC2
-
5
-
5
mA
CE1 = V
IL
, CE2 = V
IH
V
IH
= VCC, V
IL
= 0V
f = 1MH
Z
, I
I/O
= 0mA
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