參數(shù)資料
型號(hào): A43L3616V-6
廠商: AMIC Technology Corporation
英文描述: 2M X 16 Bit X 4 Banks Synchronous DRAM
中文描述: 200萬(wàn)× 16位× 4個(gè)銀行同步DRAM
文件頁(yè)數(shù): 32/41頁(yè)
文件大小: 865K
代理商: A43L3616V-6
A43L3616
(February, 2002, Version 3.0)
32
AMIC Technology, Inc.
Read Interrupted by Precharge Command & Read Burst Stop Cycle @Burst Length=Full Page
High
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
CLOCK
CKE
CS
RAS
CAS
ADDR
BS1
Row Active
(A-Bank)
: Don't care
RAa
A10/AP
CAa
WE
QAa3
QAa2
QAa1
QAa4
QAb0
DQM
QAa4
QAa3
QAa1
QAa2
QAb0
QAb1
QAb2
QAb3
DQ
(CL=2)
QAb1
QAb2
QAb3
DQ
(CL=3)
Precharge
(A-Bank)
Read
(A-Bank)
CAb
Read
(A-Bank)
Burst Stop
1
QAa0
QAb4
QAb5
1
QAa0
2
QAb4
QAb5
2
BS0
RAa
* Note : 1. At full page mode, burst is wrap-around at the end of burst. So auto precharge is impossible.
2. About the valid DQ’s after burst stop, it is same as the case of
RAS
interrupt.
Both cases are illustrated above timing diagram. See the label 1,2 on them.
But at burst write, burst stop and
RAS
interrupt should be compared carefully.
Refer the timing diagram of “Full page write burst stop cycle”.
3. Burst stop is valid at every burst length.
相關(guān)PDF資料
PDF描述
A43L3616V-6V 2M X 16 Bit X 4 Banks Synchronous DRAM
A43L3616V-7 2M X 16 Bit X 4 Banks Synchronous DRAM
A43L3616V-7V 2M X 16 Bit X 4 Banks Synchronous DRAM
A43L4616 4M X 16 Bit X 4 Banks Synchronous DRAM
A43L4616V-7 4M X 16 Bit X 4 Banks Synchronous DRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
A43L3616V-6V 制造商:AMICC 制造商全稱(chēng):AMIC Technology 功能描述:2M X 16 Bit X 4 Banks Synchronous DRAM
A43L3616V-7 制造商:AMICC 制造商全稱(chēng):AMIC Technology 功能描述:2M X 16 Bit X 4 Banks Synchronous DRAM
A43L3616V-75I 制造商:AMICC 制造商全稱(chēng):AMIC Technology 功能描述:1M X 16 Bit X 4 Banks Synchronous DRAM
A43L3616V-7V 制造商:AMICC 制造商全稱(chēng):AMIC Technology 功能描述:2M X 16 Bit X 4 Banks Synchronous DRAM
A43L3616V-95I 制造商:AMICC 制造商全稱(chēng):AMIC Technology 功能描述:1M X 16 Bit X 4 Banks Synchronous DRAM