參數(shù)資料
型號: A43L2616AV-7F
廠商: AMIC Technology Corporation
英文描述: 1M X 16 Bit X 4 Banks Synchronous DRAM
中文描述: 100萬× 16位× 4個銀行同步DRAM
文件頁數(shù): 33/42頁
文件大?。?/td> 1119K
代理商: A43L2616AV-7F
A43L2616A
PRELIMINARY (November, 2004, Version 0.0)
32
AMIC Technology, Corp.
Write Interrupted by Precharge Command & Write Burst Stop Cycle @ Burst Length = Full Page
High
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
CLOCK
CKE
CS
RAS
CAS
ADDR
BS1
Row Active
(A-Bank)
: Don't care
RAa
A10/AP
CAa
WE
DQM
DAa4
DAa3
DAa1
DAa2
DAb0
DAb1
DAb2
DAb3
DQ
Precharge
(A-Bank)
Write
(A-Bank)
CAb
Write
(A-Bank)
Burst Stop
DAa0
DAb4
DAb5
t
RDL
t
BDL
* Note 2
BS0
RAa
* Note : 1. At full page mode, burst is wrap-around at the end of burst. So auto precharge is impossible.
2. Data-in at the cycle of interrupted by precharge cannot be written into the corresponding memory cell.
It is defined by AC parameter of t
RDL
(=2CLK).
DQM at write interrupted by precharge command is needed to prevent invalid write.
DQM should mask invalid input data on precharge command cycle when asserting precharge before end of burst.
Input data after Row precharge cycle will be masked internally.
3. Burst stop is valid at every burst length.
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