參數(shù)資料
型號(hào): A43L2616
廠(chǎng)商: AMIC Technology Corporation
英文描述: 1M X 16 Bit X 4 Banks Synchronous DRAM
中文描述: 100萬(wàn)× 16位× 4個(gè)銀行同步DRAM
文件頁(yè)數(shù): 32/41頁(yè)
文件大小: 1053K
代理商: A43L2616
A43L2616
(September, 2004, Version 3.1)
31
AMIC Technology, Corp.
Read Interrupted by Precharge Command & Read Burst Stop Cycle @Burst Length=Full Page
High
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
CLOCK
CKE
CS
RAS
CAS
ADDR
BS1
Row Active
(A-Bank)
: Don't care
RAa
A10/AP
CAa
WE
QAa3
QAa2
QAa1
QAa4
QAb0
DQM
QAa4
QAa3
QAa1
QAa2
QAb0
QAb1
QAb2
QAb3
DQ
(CL=2)
QAb1
QAb2
QAb3
DQ
(CL=3)
Precharge
(A-Bank)
Read
(A-Bank)
CAb
Read
(A-Bank)
Burst Stop
1
QAa0
QAb4
QAb5
1
QAa0
2
QAb4
QAb5
2
BS0
RAa
* Note : 1. At full page mode, burst is wrap-around at the end of burst. So auto precharge is impossible.
2. About the valid DQ’s after burst stop, it is same as the case of
RAS interrupt.
Both cases are illustrated above timing diagram. See the label 1,2 on them.
But at burst write, burst stop and RAS interrupt should be compared carefully.
Refer the timing diagram of “Full page write burst stop cycle”.
3. Burst stop is valid at every burst length.
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A43L2616V 1M X 16 Bit X 4 Banks Synchronous DRAM
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