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參數(shù)資料
| 型號： | A418316V-35 |
| 廠商： | AMIC Technology Corporation |
| 英文描述： | 256K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE |
| 中文描述： | 256 × 16的CMOS動態(tài)RAM的快速頁面模式 |
| 文件頁數(shù)： | 9/25頁 |
| 文件大?。?/td> | 278K |
| 代理商： | A418316V-35 |
A418316 Series
PRELIMINARY (July, 2003, Version 0.0)
7
AMIC Technology, Inc.
AC Characteristics
(continued)
(VCC = 5.0V
±
10%, VSS = 0V, Ta = 0
°
C to +70
°
C or -40
°
C to +85
°
C)
Test Conditions:
Input timing reference level: V
IH
/V
IL
=2.4V/0.8V
Output reference level: V
OH
/V
OL
=2.0V/0.8V
Output Load: 2TTL gate + CL (50pF)
Assumed t
T
=2ns
-25
-35
#
Std
Symbol
Parameter
Min.
Max.
Min.
Max.
Unit
Notes
18
t
RCS
Read Command Setup Time
0
-
0
-
ns
19
t
RCH
Read Command Hold Time
0
-
0
-
ns
9
20
t
RRH
Read Command Hold Time
Reference to RAS
0
-
0
-
ns
9
21
t
RAL
Column Address to RAS Lead
Time
12
-
17
-
ns
22
t
COH
Output Hold After CAS Low
3
-
3
-
ns
23
t
OFF
Output Buffer Turn-Off Delay Time
-
3
-
3
ns
8, 10
24
t
ASC
Column Address Setup Time
0
-
0
-
ns
25
t
CAH
Column Address Hold Time
5
-
6
-
ns
26
t
OES
OE
Low to CAS High Set Up
5
-
7
-
ns
27
t
WCS
Write Command Setup Time
0
-
0
-
ns
11
28
t
WCH
Write Command Hold Time
5
-
6
-
ns
11
29
t
WCR
Write Command Hold Time to RAS
22
-
31
-
ns
30
t
WP
Write Command Pulse Width
5
-
6
-
ns
31
t
RWL
Write Command to RAS Lead
Time
7
-
10
-
ns
32
t
CWL
Write Command to CAS Lead
Time
5
-
7
-
ns
33
t
DS
Data-in setup Time
0
-
0
-
ns
12
34
t
DH
Data-in Hold Time
5
-
6
-
ns
12
35
t
DHR
Data-in Hold Time to RAS
22
-
31
-
ns
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