參數(shù)資料
型號(hào): A418316
廠商: AMIC Technology Corporation
英文描述: 256K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE
中文描述: 256 × 16的CMOS動(dòng)態(tài)RAM的快速頁面模式
文件頁數(shù): 10/25頁
文件大?。?/td> 278K
代理商: A418316
A418316 Series
PRELIMINARY (July, 2003, Version 0.0)
8
AMIC Technology, Inc.
AC Characteristics (continued)
(VCC = 5.0V
±
10%, VSS = 0V, Ta = 0
°
C to +70
°
C or -40
°
C to +85
°
C)
Test Conditions:
Input timing reference level: V
IH
/V
IL
=2.4V/0.8V
Output reference level: V
OH
/V
OL
=2.0V/0.8V
Output Load: 2TTL gate + CL (50pF)
Assumed t
T
=2ns
-25
-35
#
Std
Symbol
Parameter
Min.
Max.
Min.
Max.
Unit
Notes
36
t
RWC
Read-Modify-Write Cycle Time
62
-
85
-
ns
37
t
RWD
RAS to WE Delay Time
(Read-Modify-Write)
34
-
46
-
ns
11
38
t
CWD
CAS to WE Delay Time (Read-
Modify-Write)
17
-
21
-
ns
11
39
t
AWD
Column Address to WE Delay
Time (Read-Modify-Write)
21
-
28
-
ns
11
40
t
OEH
OE Hold Time from WE
5
-
6
-
ns
41
t
OEP
OE High Pulse Width
5
-
5
-
ns
42
t
PC
Read or Write Cycle Time (FAST
Page)
15
-
19
-
ns
14
43
t
CPA
Access Time from CAS Precharge
(FAST Page)
-
17
-
21
ns
13
44
t
CP
CAS Precharge Time
4
-
6
-
ns
45
t
PCM
FAST Page Mode RMW Cycle
Time
32
-
40
-
ns
46
t
CRW
FAST Page Mode CAS Pulse
Width (RMW)
24
-
30
-
ns
47
t
RASP
RAS Pulse Width (FAST Page)
30
200K
35
200K
ns
48
t
CSR
CAS Setup Time
(CAS-before-RAS)
5
-
5
-
ns
3
49
t
CHR
CAS Hold Time
(CAS-before-RAS)
7
-
10
-
ns
3
50
t
RPC
RAS to CAS Precharge Time
10
-
10
-
ns
3
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