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參數(shù)資料
| 型號： | A416316BV-40L |
| 廠商： | AMIC Technology Corporation |
| 英文描述： | 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE |
| 中文描述： | 64K的× 16的CMOS動態(tài)RAM的快速頁面模式 |
| 文件頁數(shù)： | 9/25頁 |
| 文件大?。?/td> | 418K |
| 代理商： | A416316BV-40L |
A416316B Series
PRELIMINARY
(November, 2000, Version 0.0)
8
AMIC Technology, Inc.
AC Characteristics (continued)
(VCC = 5V
±
10%, VSS = 0V, Ta = 0
°
C to +70
°
C)
#
Std
Symbol
Parameter
-30
-35
-40
Unit
Notes
Min.
Max.
Min.
Max.
Min.
Max.
38
t
CWD
CAS
to
WE
Delay Time
(Read-Modify-Write)
26
-
28
-
30
-
ns
11
39
t
AWD
Column Address to
WE
Delay Time
(Read-Modify-Write)
32
-
35
-
35
-
ns
11
40
t
RASS
RAS
Pulse Width (Self Refresh Mode) 300
-
300
-
300
-
μ
s
41
t
CPN
CAS
Precharge Time
(
CAS
before
RAS
)
10
100K
10
100K
10
100K
ns
42
t
PC
Read or Write Cycle Time (Fast Page)
19
-
21
-
23
-
ns
14
43
t
CPA
Access Time from
CAS
Precharge
(Fast Page)
-
19
-
21
-
23
ns
13
44
t
CP
CAS
Precharge Time (Fast Page)
3
-
4
-
5
-
ns
45
t
PRM
Fast Page Mode RMW Cycle Time
56
-
58
-
60
-
ns
46
t
CRW
Fast Page Mode
CAS
Pulse Width
(RMW)
-
44
-
46
-
48
ns
47
t
RASP
RAS
Pulse Width (Fast Page)
30
75K
35
75K
40
75K
ns
48
t
CSR
CAS
Setup Time (
CAS
-before-
RAS
)
0
-
0
-
0
-
ns
3
49
t
CHR
CAS
Hold Time (
CAS
-before-
RAS
)
7
-
8
-
8
-
ns
3
50
t
RPC
RAS
to
CAS
Precharge Time
(
CAS
-before-
RAS
)
0
-
0
-
0
-
ns
51
t
ROH
RAS
Hold Time Reference to
OE
6
-
7
-
8
-
ns
52
t
OEA
OE
Access Time
-
10
-
11
-
12
ns
53
t
OED
OE
to Data Delay
5
-
5
-
5
-
ns
54
t
OEZ
Output Buffer Turn-off Delay from
OE
0
5
0
6
0
6
ns
8
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PDF描述 |
|---|---|
| A416316B | 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE |
| A418316S-25 | 256K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE |
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| A418316V-25 | 256K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE |
| A418316V-25U | 256K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE |
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參數(shù)描述 |
|---|---|
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