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參數(shù)資料
| 型號(hào)： | A3RS91.1 |
| 元件分類： | 終端器 |
| 英文描述： | 0 MHz - 3000 MHz 50 ohm RF/MICROWAVE TERMINATION |
| 封裝： | ROHS COMPLIANT PACKAGE-2 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 69K |
| 代理商： | A3RS91.1 |
When properly mounted on an appropriate heat sink, this chip
device provides high power dissipation capabilities. Ideal
for ferrite isolator applications, the improved thin film design
technology and laser trimming provide proven RF power
capabilities to meet the demands of today's CDMA and
WCDMA system requirements. Aluminum Nitride is featured
for those applications where the use and disposal of Beryllium
oxide is a concern.
Environmentally friendly AlN substrate
High performance, thin film element
Power 100 Watts
New adhesion process results in improved
terminal strength
On-chip matching network improves frequency
performance over the DC-3 GHz frequency range
SPECIFICATIONS
Parameters
Specifications
Frequency Range
DC to 3 GHz
Power
100 Watts*
VSWR
1.10:1 max
Resistance
50 Ohms +/- 5%
Operating Temperature
-55 C to 150 C
°°
Substrate
Aluminum Nitride
* Refer to average power derating curve chart.
.225 REF
[5,72] REF
.350REF
[8,89]REF
.040 REF
[1,02]
WRAP AROUND
.045
[1,14]
.050
[1,27]
PHYSICAL DIMENSIONS
CHIP BASE TEMP C
%
OF
R
A
TED
POWER
25
0
50
75
100
75
100
125
150
AVERAGE POWER DERATING CURVE
TYPICAL PERFORMANCE
A3RS91.1
High Power Chip Termination
100 Watts
A3RS91.1
300 Dino Drive, Ann Arbor, MI 48103
Tel: 888-244-6638 or 734-426-5553 Fax: 734-426-5557
www.aeroflex.com/inmet inmetsales@aeroflex.com
KEY: Inches [Millimeters] .XX ±.03 .XXX ±.010 [.X ±0.8 .XX ±0.25]
REV 04/11
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