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鍙冩暩(sh霉)璩囨枡
| 鍨嬭櫉锛� | A3P030-VQ100I |
| 寤犲晢锛� | Microsemi SoC |
| 鏂囦欢闋佹暩(sh霉)锛� | 11/220闋� |
| 鏂囦欢澶�?銆�?/td> | 0K |
| 鎻忚堪锛� | IC FPGA 1KB FLASH 30K 100-VQFP |
| 妯�(bi膩o)婧�(zh菙n)鍖呰锛� | 90 |
| 绯诲垪锛� | ProASIC3 |
| 杓稿叆/杓稿嚭鏁�(sh霉)锛� | 77 |
| 闁€鏁�(sh霉)锛� | 30000 |
| 闆绘簮闆诲锛� | 1.425 V ~ 1.575 V |
| 瀹夎椤炲瀷锛� | 琛ㄩ潰璨艰 |
| 宸ヤ綔婧害锛� | -40°C ~ 85°C |
| 灏佽/澶栨锛� | 100-TQFP |
| 渚涙噳(y墨ng)鍟嗚ō(sh猫)鍌欏皝瑁濓細 | 100-VQFP锛�14x14锛� |
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ProASIC3 DC and Switching Characteristics
2-94
Revision 13
Timing Characteristics
Figure 2-34 RAM Reset. Applicable to Both RAM4K9 and RAM512x18.
CLK
RESET
DOUT|RD
Dn
tCYC
tCKH
tCKL
tRSTBQ
Dm
Table 2-116 RAM4K9
Commercial-Case Conditions: TJ = 70掳C, Worst-Case VCC = 1.425 V
Parameter
Description
鈥�2
鈥�1
Std. Units
tAS
Address setup time
0.25 0.28 0.33
ns
tAH
Address hold time
0.00 0.00 0.00
ns
tENS
REN, WEN setup time
0.14 0.16 0.19
ns
tENH
REN, WEN hold time
0.10 0.11 0.13
ns
tBKS
BLK setup time
0.23 0.27 0.31
ns
tBKH
BLK hold time
0.02 0.02 0.02
ns
tDS
Input data (DIN) setup time
0.18 0.21 0.25
ns
tDH
Input data (DIN) hold time
0.00 0.00 0.00
ns
tCKQ1
Clock High to new data valid on DOUT (output retained, WMODE = 0)
2.36 2.68 3.15
ns
Clock High to new data valid on DOUT (flow-through, WMODE = 1)
1.79 2.03 2.39
ns
tCKQ2
Clock High to new data valid on DOUT (pipelined)
0.89 1.02 1.20
ns
tC2CWWL1
Address collision clk-to-clk delay for reliable write after write on same
address鈥擜pplicable to Closing Edge
0.33 0.28 0.25
ns
tC2CWWH1
Address collision clk-to-clk delay for reliable write after write on same
address鈥擜pplicable to Rising Edge
0.30 0.26 0.23
ns
tC2CRWH1
Address collision clk-to-clk delay for reliable read access after write on same
address鈥擜pplicable to Opening Edge
0.45 0.38 0.34
ns
tC2CWRH1
Address collision clk-to-clk delay for reliable write access after read on same
address鈥� Applicable to Opening Edge
0.49 0.42 0.37
ns
tRSTBQ
RESET Low to data out Low on DOUT (flow-through)
0.92 1.05 1.23
ns
RESET Low to Data Out Low on DOUT (pipelined)
0.92 1.05 1.23
ns
tREMRSTB
RESET removal
0.29 0.33 0.38
ns
Notes:
1. For more information, refer to the application note Simultaneous Read-Write Operations in Dual-Port SRAM for Flash-
2. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values.
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鐩搁棞(gu膩n)浠ｇ悊鍟�/鎶€琛�(sh霉)鍙冩暩(sh霉) |
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|---|---|
| A3P030-VQ144 | 鍒堕€犲晢:ACTEL 鍒堕€犲晢鍏ㄧū:Actel Corporation 鍔熻兘鎻忚堪:ProASIC3 Flash Family FPGAs |
| A3P030-VQ144ES | 鍒堕€犲晢:ACTEL 鍒堕€犲晢鍏ㄧū:Actel Corporation 鍔熻兘鎻忚堪:ProASIC3 Flash Family FPGAs |
| A3P030-VQ144I | 鍒堕€犲晢:ACTEL 鍒堕€犲晢鍏ㄧū:Actel Corporation 鍔熻兘鎻忚堪:ProASIC3 Flash Family FPGAs |
| A3P030-VQ144PP | 鍒堕€犲晢:ACTEL 鍒堕€犲晢鍏ㄧū:Actel Corporation 鍔熻兘鎻忚堪:ProASIC3 Flash Family FPGAs |
| A3P030-VQG100 | 鍔熻兘鎻忚堪:IC FPGA 256MAC 81I/O 100VQFP RoHS:鏄� 椤炲垾:闆嗘垚闆昏矾 (IC) >> 宓屽叆寮� - FPGA锛堢従(xi脿n)鍫村彲绶ㄧ▼闁€闄ｅ垪锛� 绯诲垪:ProASIC3 妯�(bi膩o)婧�(zh菙n)鍖呰:152 绯诲垪:IGLOO PLUS LAB/CLB鏁�(sh霉):- 閭忚集鍏冧欢/鍠厓鏁�(sh霉):792 RAM 浣嶇附瑷�:- 杓稿叆/杓稿嚭鏁�(sh霉):120 闁€鏁�(sh霉):30000 闆绘簮闆诲:1.14 V ~ 1.575 V 瀹夎椤炲瀷:琛ㄩ潰璨艰 宸ヤ綔婧害:-40°C ~ 85°C 灏佽/澶栨:289-TFBGA锛孋SBGA 渚涙噳(y墨ng)鍟嗚ō(sh猫)鍌欏皝瑁�:289-CSP锛�14x14锛� |
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