參數(shù)資料
型號: A3933SEQ
廠商: Allegro MicroSystems, Inc.
英文描述: THREE-PHASE POWER MOSFET CONTROLLER
中文描述: 三相功率MOSFET控制器
文件頁數(shù): 5/12頁
文件大?。?/td> 168K
代理商: A3933SEQ
3933
THREE-PHASE POWER
MOSFET CONTROLLER
www.allegromicro.com
Terminal
Name
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
PGND
RESET
GLC
SC
GHC
CC
GLB
SB
GHB
CB
GLA
SA
GHA
CA
V
CCOUT
LCAP
FAULT
MODE
V
BB
H1
H3
H2
DIR
BRAKE
BRKCAP
BRKSEL
PWM
RC
SENSE
REF
DEAD
AGND
RESET
— A logic input used to enable the device, internally
pulled up to V
LCAP
(+5 V). A logic HIGH will disable the
device and force all gate drivers to 0 V, coasting the motor. A
logic LOW allows the gate drive to follow commutation logic.
This input overrides BRAKE.
GLA/GLB/GLC
— Low-side, gate-drive outputs for external
NMOS drivers. External series-gate resistors (as close as
possible to the NMOS gate) can be used to control the slew rate
seen at the power-driver gate, thereby controlling the di/dt and
dv/dt of the SA/SB/SC outputs. Each output is designed and
specified to drive a 1000 pF load with a rise time of 50 ns.
SA/SB/SC
— Directly connected to the motor, these terminals
sense the voltages switched across the load. These terminals
are also connected to the negative side of the bootstrap capaci-
tors and are the negative supply connections for the floating
high-side drive.
GHA/GHB/GHC
— High-side, gate-drive outputs for external
NMOS drivers. External series-gate resistors (as close as
possible to the NMOS gate) can be used to control the slew rate
seen at the power-driver gate, thereby controlling the di/dt and
dv/dt of the SA/SB/SC outputs. Each output is designed and
specified to drive a 1000 pF load with a rise time of 100 ns.
CA/CB/CC
— High-side connections for the bootstrap capaci-
tors, positive supply for high-side gate drive. The bootstrap
capacitor is charged to approximately V
CCOUT
when the
associated output SA/SB/SC terminal is low. When the output
swings high, the voltage on this terminal rises with the output to
provide the boosted gate voltage needed for n-channel power
FETs.
Terminal Descriptions
continued next page
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