參數(shù)資料
型號: A29DL324TV-90
廠商: AMIC Technology Corporation
英文描述: 32M-Bit CMOS Low Voltage Dual Operation Flash Memory 4M-Byte by 8-Bit (Byte Mode) / 2M-Word by 16-Bit (Word Mode)
中文描述: 32兆位的CMOS低電壓雙操作閃存分,由8位(字節(jié)模式)/ 200萬詞字節(jié)的16位(字模式)
文件頁數(shù): 29/46頁
文件大小: 556K
代理商: A29DL324TV-90
A29DL324 Series
PRELIMINARY (May, 2002, Version 0.0)
29
AMIC Technology, Inc.
Electrical Characteristics
Before turning on power, input GND ± 0.2 V to the
RESET
pin until VCC VCC (MIN.).
DC Characteristics (Recommended Operating Conditions Unless Otherwise Noted)
Parameter
Symbol
Test Description
Min. Typ.
Max.
Unit
High level input voltage
Low level input voltage
High level output voltage
Low level output voltage
Input leakage current
Output leakage current
Read
Power
Supply
Current
V
IH
V
IL
V
OH
V
OL
I
LI
I
LO
I
CC1
I
OH
= -500 μA, VCC = VCC (min.)
I
OL
= +1.0 mA, VCC = VCC (min.)
VCC = VCC (max.),
CE
= V
IL
,
OE
= V
IH
2.4
VCC+0.3
+0.5
0.4
+1.0
+1.0
16
4
16
4
30
V
V
V
V
μA
μA
mA
-0.3
2.4
-1.0
-1.0
t
CYCLE
= 5 MHz
t
CYCLE
= 1 MHz
t
CYCLE
= 5 MHz
t
CYCLE
= 1 MHz
10
2
10
2
15
BYTE mode
WORD mode
Program, Erase
I
CC2
VCC = VCC (max.),
CE
= V
IL
,
OE
= V
IH
mA
Standby
I
CC3
VCC = VCC (max.),
CE
=
RESET
=
WP
(ACC) = VCC ± 0.3 V,
OE
= V
IL
0.2
5
μA
Standby / Reset
I
CC4
VCC = VCC (max.),
RESET
= GND ± 0.2 V
V
IH
= VCC ± 0.2 V, V
IL
= GND ± 0.2 V
V
IH
= VCC ± 0.2 V, V
IL
= GND ± 0.2 V
V
IH
= VCC ± 0.2 V, V
IL
= GND ± 0.2 V
0.2
5
μA
Automatic sleep mode
Read during programming
Read during erasing
Programming during
suspend
I
CC5
I
CC6
I
CC7
I
CC8
0.2
21
21
17
5
45
45
35
μA
mA
mA
mA
CE
= V
IL
,
OE
= V
IH
,
Automatic programming during suspend
WP
(ACC) pin
VCC
High Voltage is applied
5
15
10
30
12.5
9.5
1.7
Accelerated programming
I
ACC
mA
RESET
high level input voltage
Accelerated programming voltage
Low VCC lock-out voltage (Note)
V
ID
11.5
V
V
V
V
ACC
V
LKO
High Voltage is applied
V
IH
= VCC
±
0.3V
;
V
IL
=
VSS
±
0.3V
8.5
Notes:
1. When VCC is equal to or lower than V
LKO
, the device ignores all write cycles.
Remark: These DC characteristics are in common regardless of product classification.
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PDF描述
A29DL324UV-90 32M-Bit CMOS Low Voltage Dual Operation Flash Memory 4M-Byte by 8-Bit (Byte Mode) / 2M-Word by 16-Bit (Word Mode)
A29DL324TV-120 32 Megabit (4M x 8-Bit/2M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
A29DL324UV-120 32 Megabit (4M x 8-Bit/2M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
A29DL324UV-70 32 Megabit (4M x 8-Bit/2M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
A29DL324TG-90 32M-Bit CMOS Low Voltage Dual Operation Flash Memory 4M-Byte by 8-Bit (Byte Mode) / 2M-Word by 16-Bit (Word Mode)
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