參數(shù)資料
型號(hào)： A29DL322UV-70
廠商： AMIC Technology Corporation
英文描述： 32 Megabit (4M x 8-Bit/2M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
中文描述： 32兆位（4米× 8-Bit/2M x 16位），3.0伏的CMOS只，同時(shí)作業(yè)快閃記憶體
文件頁(yè)數(shù)： 46/50頁(yè)
文件大?。?/td> 771K
代理商： A29DL322UV-70
A29DL32x Series
PRELIMINARY
(May, 2005, Version 0.0)
45
AMIC Technology, Corp.
ERASE AND PROGRAMMING PERFORMANCE
Parameter
Typ. (Note 1)
Max. (Note 2)
Unit
Comments
Sector Erase Time
0.7
15
sec
Chip Erase Time
27
sec
Excludes 00h programming
prior to erasure (Note 4)
Byte Programming Time
5
150
μ
s
Word Programming Time
7
210
μ
s
Accelerated Word/Byte Programming Time
4
120
μ
s
Byte Mode
9
27
sec
Chip Programming Time
(Note 3)
Word Mode
6
18
sec
Excludes system-level
overhead (Note 5)
Notes:
1. Typical program and erase times assume the following conditions: 25
°
C, 3.0V VCC, 10,000 cycles. Additionally, programming
typically assumes checkerboard pattern.
2. Under worst case conditions of 90
°
C, VCC = 2.7V, 100,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum byte program time listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the four-bus-cycle command sequence for programming. See Table 12
for further information on command definitions.
6. The device has a minimum erase and program cycle endurance of 10,000 cycles.
LATCH-UP CHARACTERISTICS
Description
Min.
Max.
Input Voltage with respect to VSS on all I/O pins
-1.0V
VCC+1.0V
VCC Current
-100 mA
+100 mA
Input voltage with respect to VSS on all pins except I/O pins
(including A9,
OE
and
RESET
)
-1.0V
12.5V
Includes all pins except VCC. Test conditions: VCC = 3.0V, one pin at time.
PACKAGE AND PIN CAPACITANCE
Parameter Symbol
Parameter Description
Test Setup
Typ.
Max.
Unit
TSOP
TF BGA
TSOP
TF BGA
TSOP
TF BGA
6
4.2
8.5
5.4
7.5
3.9
7.5
5
12
6.5
9
4.7
pF
pF
pF
pF
pF
pF
C
IN
Input Capacitance
V
IN
=0
C
OUT
Output Capacitance
V
OUT
=0
C
IN2
Control Pin Capacitance
V
IN
=0
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
A
= 25
°
C, f = 1.0MHz
DATA RETENTION
Parameter
Test Conditions
Min
Unit
150
°
C
125
°
C
10
Years
Minimum Pattern Data Retention Time
20
Years
相關(guān)PDF資料
PDF描述
A29DL322UV-80 32 Megabit (4M x 8-Bit/2M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
A29DL322UV-90 32 Megabit (4M x 8-Bit/2M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
A29DL323TG-120 32 Megabit (4M x 8-Bit/2M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
A29DL323TG-70 32 Megabit (4M x 8-Bit/2M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
A29DL323TG-80 32 Megabit (4M x 8-Bit/2M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
A29DL322UV-80 制造商:AMICC 制造商全稱:AMIC Technology 功能描述:32 Megabit (4M x 8-Bit/2M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
A29DL322UV-90 制造商:AMICC 制造商全稱:AMIC Technology 功能描述:32 Megabit (4M x 8-Bit/2M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
A29DL322V 制造商:AMICC 制造商全稱:AMIC Technology 功能描述:32 Megabit (4M x 8-Bit/2M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
A29DL323 制造商:AMICC 制造商全稱:AMIC Technology 功能描述:32 Megabit (4M x 8-Bit/2M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
A29DL323SERIES 制造商:未知廠家 制造商全稱:未知廠家 功能描述:32M-Bit CMOS Low Voltage Dual Operation Flash Memory 4M-Byte by 8-Bit (Byte Mode) / 2M-Word by 16-Bit
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