參數(shù)資料
型號(hào): A18-1
元件分類: 放大器
英文描述: 10 MHz - 1000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
封裝: HERMETIC SEALED, TO-8, 4 PIN
文件頁數(shù): 1/2頁
文件大小: 371K
代理商: A18-1
Cascadable Amplifier
10 to 1000 MHz
A18-1 / SMA18-1
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
V3
1
Electrical Specifications: Z0 = 50
, VCC = +15 VDC
Parameter
Typical
Guaranteed
25C
0 to 50C
-54 to +85C*
Frequency
MHz
5-1100
10-1000
Small Signal Gain (min)
dB
14.7
14.0
13.5
Gain Flatness (max)
dB
±0.3
±0.5
±1.0
Reverse Isolation
dB
17
Noise Figure (max)
dB
3.8
5.0
5.5
Power Output
@ 1 dB comp. (min)
dBm
16.0
15.0
14.5
IP3
dBm
+30
IP2
dBm
+42
Second Order Harmonic IP
dBm
+45
VSWR Input / Output (max)
1.5:1 / 1.5:1
1.8:1 / 1.8:1
2.0:1 / 2.0:1
DC Current @ 15 Volts (max)
mA
44
46
48
Units
Features
HIGH DYNAMIC RANGE
HIGH OUTPUT POWER: +16 dBm (TYP.)
HIGH THIRD ORDER I.P.: +30 dBM (TYP.)
LOW NOISE: 3.8 dB (TYP.)
Description
The A18-1 RF amplifier is a discrete hybrid design, which uses
thin film manufacturing processes for accurate performance
and high reliability.
This single stage GaAs FET feedback amplifier design displays
impressive performance characteristics over a broadband
frequency range. An RF choke is used for DC power supply
decoupling.
Both TO-8 and Surface Mount packages are hermetically
sealed, and MIL-STD-883 environmental screening is available
.
Product Image
Ordering Information
Part Number
Package
A18-1
TO-8
SMA18-1
Surface Mount
CA18-1
SMA Connectorized
Absolute Maximum Ratings
Parameter
Absolute
Maximum
Storage Temperature
-62C to +125C
Case Temperature
+125C
DC Voltage
+17 V
Continuous Input Power
+13 dBm
Short Term Input power
(1 minute max.)
50 mW
Peak Power (3 sec max.)
0.5 W
“S” Series Burn-In
Temperature (case)
+125C
Thermal Data: VCC = +15 VDC
Parameter
Rating
Thermal Resistance θjc
145C/W
Transistor Power Dissipation Pd
0.4 W
Junction Temperature Rise
Above Case Tjc
+58C
* Over temperature performance limits for part number CA18-1, guaranteed from 0
oC to +50oC only.
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