Table 2-2 Absolute Maximum Ratings

      參數(shù)資料
      型號: A1440A-1TQG176C
      廠商: Microsemi SoC
      文件頁數(shù): 9/90頁
      文件大?。?/td> 0K
      描述: IC FPGA 4K GATES 176-TQFP
      產(chǎn)品變化通告: A1440A Family Discontinuation 24/Jan/2012
      標(biāo)準(zhǔn)包裝: 40
      系列: ACT™ 3
      LAB/CLB數(shù): 564
      輸入/輸出數(shù): 140
      門數(shù): 4000
      電源電壓: 4.5 V ~ 5.5 V
      安裝類型: 表面貼裝
      工作溫度: 0°C ~ 70°C
      封裝/外殼: 176-LQFP
      供應(yīng)商設(shè)備封裝: 176-TQFP(24x24)
      Accelerator Series FPGAs – ACT 3 Family
      R e visio n 3
      2 -9
      5 V Operating Conditions
      Table 2-2 Absolute Maximum Ratings1, Free Air Temperature Range
      Symbol
      Parameter
      Limits
      Units
      VCC
      DC supply voltage
      –0.5 to +7.0
      V
      VI
      Input voltage
      –0.5 to VCC + 0.5
      V
      VO
      Output voltage
      –0.5 to VCC + 0.5
      V
      IIO
      I/O source sink current2
      ±20
      mA
      TSTG
      Storage temperature
      –65 to +150
      °C
      Notes:
      1. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
      Exposure to absolute maximum rated conditions for extended periods may affect device reliability. Device should not be
      operated outside the recommended operating conditions.
      2. Device inputs are normally high impedance and draw extremely low current. However, when input voltage is greater
      than VCC + 0.5 V for less than GND –0.5 V, the internal protection diodes will forward bias and can draw excessive
      current.
      Table 2-3 Recommended Operating Conditions
      Parameter
      Commercial
      Industrial
      Military
      Units
      Temperature range*
      0 to +70
      –40 to +85
      –55 to +125
      °C
      5 V power supply tolerance
      ±5
      ±10
      %VCC
      Note:
      *Ambient temperature (TA) is used for commercial and industrial; case temperature (TC) is used for military.
      Table 2-4 Electrical Specifications
      Symbol
      Parameter
      Test Condition
      Commercial
      Industrial
      Military
      Units
      Min.
      Max.
      Min.
      Max.
      Min.
      Max.
      VOH1,2 High level output
      IOH = –4 mA (CMOS)
      3.7
      3.7
      V
      IOH = –6 mA (CMOS)
      3.84
      V
      IOH = –10 mA (TTL)3
      2.40
      V
      VOL1,2 Low level output
      IOL = +6 mA (CMOS)
      0.33
      0.4
      V
      IOL = +12 mA (TTL)3
      0.50
      VIH
      High level input
      TTL inputs
      2.0
      VCC + 0.3 2.0
      VCC + 0.3
      2.0 VCC + 0.3
      V
      VIL
      Low level input
      TTL inputs
      –0.3
      0.8
      –0.3
      0.8
      –0.3
      0.8
      V
      IIN
      Input leakage
      VI = VCC or GND
      –10
      +10
      –10
      +10
      –10
      +10
      A
      IOZ
      3-state output leakage VO = VCC or GND
      –10
      +10
      –10
      +10
      –10
      +10
      A
      CIO
      I/O capacitance3,4
      10
      pF
      ICC(S)
      Standby VCC supply current (typical = 0.7 mA)
      2
      10
      20
      mA
      ICC(D) Dynamic VCC supply current. See the Power Dissipation section.
      Notes:
      1. Microsemi devices can drive and receive either CMOS or TTL signal levels. No assignment of I/Os as TTL or CMOS is
      required.
      2. Tested one output at a time, VCC = minimum.
      3. Not tested; for information only.
      4. VOUT = 0 V, f = 1 MHz
      5. Typical standby current = 0.7 mA. All outputs unloaded. All inputs = VCC or GND.
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