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參數(shù)資料
| 型號(hào)： | A12 |
| 元件分類： | 放大器 |
| 英文描述： | 10 MHz - 1000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | HERMETIC SEALED, TO-8, 4 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 371K |
| 代理商： | A12 |
Cascadable Amplifier
10 to 1000 MHz
A12 / SMA12
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
V3
1
Electrical Specifications: Z0 = 50
, VCC = +15 VDC
Parameter
Units
Typical
Guaranteed
25C
0 to 50C
-54 to +85C*
Frequency
MHz
5-1000
10-1000
Small Signal Gain (min)
dB
16.0
15.0
14.5
Gain Flatness (max)
dB
±0.3
±0.7
±1.0
Reverse Isolation
dB
20
Noise Figure (max)
dB
2.8
3.5
3.9
Power Output
@ 1 dB comp. (min)
dBm
8.0
7.0
6.5
IP3
dBm
+22
IP2
dBm
+25
Second Order Harmonic IP
dBm
+32
VSWR Input / Output (max)
1.6:1 / 1.6:1
1.9:1 / 1.9:1
2.0:1 / 2.0:1
DC Current @ 15 Volts (max)
mA
22
25
27
Features
LOW NOISE: 2.8 dB (TYP.)
HIGH GAIN: 16.0 dB (TYP.)
MEDIUM OUTPUT POWER: +8 dBm (TYP.)
LOW VSWR:<1.6:1 (TYP.)
Description
The A12 RF amplifier is a discrete hybrid design, which uses
thin film manufacturing processes for accurate performance and
high reliability.
This single stage bipolar transistor feedback amplifier design
displays impressive performance over a broadband frequency
range. Both TO-8 and Surface Mount packages are
Hermetically sealed, and MIL-STD-883 environmental screening
is available
.
Product Image
Ordering Information
Part Number
Package
A12
TO-8
SMA12
Surface Mount
CA12
SMA Connectorized
Absolute Maximum Ratings
Parameter
Absolute
Maximum
Storage Temperature
-62C to +125C
Case Temperature
+125C
DC Voltage
+17 V
Continuous Input Power
+13 dBm
Short Term Input power
(1 minute max.)
50 mW
Peak Power (3 sec max.)
0.5 W
“S” Series Burn-In
Temperature (case)
+125C
Thermal Data: VCC = +15 VDC
Parameter
Rating
Thermal Resistance θjc
170C/W
Transistor Power Dissipation Pd
0.189 W
Junction Temperature Rise
Above Case Tjc
+32C
* Over temperature performance limits for part number CA12, guaranteed from 0
oC to +50oC only.
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