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參數(shù)資料
| 型號(hào)： | 9Q512K32 |
| 廠商： | Aeroflex Inc. |
| 英文描述： | UT9Q512K32 16Megabit SRAM MCM |
| 中文描述： | UT9Q512K32 16Megabit的SRAM億立方米 |
| 文件頁(yè)數(shù)： | 5/14頁(yè) |
| 文件大?。?/td> | 135K |
| 代理商： | 9Q512K32 |
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5
DC ELECTRICAL CHARACTERISTICS (Pre/Post-Radiation)*
(-40
°
C to +125
°
C) (V
DD
= 5.0V + 10%)
SYMBOL
PARAMETER
Notes:
* Post-radiation performance guaranteed at 25
°
C per MIL-STD-883 Method 1019.
1. Measured only for initial qualification and after process or design changes that could affect input/output capacitance.
2. Supplied as a design limit but not guaranteed or tested.
3. Not more than one output may be shorted at a time for maximum duration of one second.
CONDITION
MIN
MAX
UNIT
V
IH
High-level input voltage
2.0
V
V
IL
Low-level input voltage
0.8
V
V
OL1
Low-level output voltage
I
OL
= 8mA, V
DD
=4.5V
0.4
V
V
OL2
Low-level output voltage
I
OL
= 200
μ
A,V
DD
=4.5V
0.08
V
V
OH1
High-level output voltage
I
OH
= -4mA,V
DD
=4.5V
2.4
V
V
OH2
High-level output voltage
I
OH
= 200
μ
A,V
DD
=4.5V
3.0
V
C
IN
1
Input capacitance
= 1MHz @ 0V
32
pF
C
IO1
Bidirectional I/O capacitance
= 1MHz @ 0V
16
pF
I
IN
Input leakage current
V
IN
= V
DD
and V
SS,
V
DD
= V
DD
(max)
-2
2
μ
A
I
OZ
Three-state output leakage current
V
O
= V
DD
and V
SS
V
DD
= V
DD
(max)
G = V
DD
(max)
-2
2
μ
A
I
OS2, 3
Short-circuit output current
V
DD
= V
DD
(max), V
O
= V
DD
V
DD
= V
DD
(max), V
O
= 0V
-90
90
mA
I
DD
(OP)
Supply current operating
@ 1MHz
(per byte)
Inputs: V
IL
= 0.8V,
V
IH
= 2.0V
I
OUT
= 0mA
V
DD
= V
DD
(max)
125
mA
I
DD1
(OP)
Supply current operating
@40MHz
(per byte)
Inputs: V
IL
= 0.8V,
V
IH
= 2.0V
I
OUT
= 0mA
V
DD
= V
DD
(max)
180
mA
I
DD2
(SB)
Supply current standby
@0MHz
(per byte)
Inputs: V
IL
= V
SS
I
OUT
= 0mA
E1 = V
DD
- 0.5,
V
DD
= V
DD
(max)
V
IH
= V
DD
- 0.5V
6
12
mA
mA
-40
°
C and
25
°
C
125
°
C
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