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參數(shù)資料
| 型號： | 99227 |
| 廠商： | IXYS Corporation |
| 英文描述： | PolarHV Power MOSFET |
| 中文描述： | PolarHV功率MOSFET |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 571K |
| 代理商： | 99227 |
2004 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J = 25°C to 150°C
500
V
V
DGR
T
J = 25°C to 150°C; RGS = 1 M
500
V
V
GS
Continuous
±20
V
V
GSM
Transient
±30
V
I
D25
T
C = 25°C13
A
I
DM
T
C = 25°C, pulse width limited by TJM
78
A
I
AR
T
C = 25°C26
A
E
AR
T
C = 25°C40
mJ
E
AS
T
C = 25°C
1.0
J
dv/dt
I
S
≤ I
DM, di/dt ≤ 100 A/s, VDD ≤ VDSS,
10
V/ns
T
J ≤ 150°C, RG = 4
P
D
T
C = 25°C
100
W
T
J
-55 ... +150
°C
T
JM
150
°C
T
stg
-55 ... +150
°C
T
L
1.6 mm (0.062 in.) from case for 10 s
300
°C
V
ISOL
50/60 Hz, RMS, t = 1, leads-to-tab
2500
V~
F
C
Mounting Force
11..65/2.5..15
N/lb
Weight
2g
G = Gate
D = Drain
S = Source
DS99227(10/04)
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C, unless otherwise specified)
Min. Typ.
Max.
V
DSS
V
GS = 0 V, ID = 250 A
500
V
V
GS(th)
V
DS = VGS, ID = 250A
2.5
5.0
V
I
GSS
V
GS = ±30 VDC, VDS = 0
±100
nA
I
DSS
V
DS = VDSS
25
A
V
GS = 0 V
T
J = 125°C
250
A
R
DS(on)
V
GS = 10 V, ID = IT
260
m
Pulse test, t
≤ 300 s, duty cycle d ≤ 2 %
PolarHVTM
Power MOSFET
V
DSS
= 500
V
I
D25
=13
A
R
DS(on) =
260 m
Electrically Isolated Tab,
N-Channel Enhancement Mode,
Avalanche Rated
ISOPLUS220TM
(IXTC)
E153432
Advanced Technical Information
G
D
S
Isolated Tab
Features
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low drain to tab capacitance(<30pF)
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Advantages
Easy assembly
Space savings
High power density
IXTC 26N50P
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