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參數(shù)資料
| 型號： | 93LC66B |
| 英文描述： | 4K 2.5V Microwire Serial EEPROM |
| 中文描述： | 4K的2.5V的微型導(dǎo)線串行EEPROM |
| 文件頁數(shù)： | 7/12頁 |
| 文件大?。?/td> | 185K |
| 代理商： | 93LC66B |
93LC66A/B
1997 Microchip Technology Inc.
Preliminary
DS21209A-page 7
3.8
WRITE
The WRITE instruction is followed by 8 bits (93LC66A)
or 16 bits (93LC66B) of data which are written into the
specified address. After the last data bit is put on the DI
pin, the falling edge of CS initiates the self-timed auto-
erase and programming cycle.
The DO pin indicates the READY/BUSY status of the
device, if CS is brought high after a minimum of 250 ns
low (T
CSL
) and before the entire write cycle is complete.
DO at logical “0” indicates that programming is still in
progress. DO at logical “1” indicates that the register at
the specified address has been written with the data
specified and the device is ready for another instruc-
tion.
3.9
Write All (WRAL)
The Write All (WRAL) instruction will write the entire
memory array with the data specified in the command.
The WRAL cycle is completely self-timed and com-
mences at the falling edge of the CS. Clocking of the
CLK pin is not necessary after the device has entered
the WRAL cycle. The WRAL command does include an
automatic ERAL cycle for the device. Therefore, the
WRAL instruction does not require an ERAL instruc-
tion, but the chip must be in the EWEN status.
The DO pin indicates the READY/BUSY status of the
device if CS is brought high after a minimum of 250 ns
low (T
CSL
).
FIGURE 3-7:
WRITE TIMING
FIGURE 3-8:
WRAL TIMING
CS
CLK
DI
DO
1
0
1
An
A0
Dx
D0
BUSY
READY
HIGH-Z
HIGH-Z
Twc
T
CSL
T
CZ
T
SV
CS
CLK
DI
DO
HIGH-Z
1
0
0
0
1
X
X
Dx
D0
HIGH-Z
BUSY
READY
T
WL
Guaranteed at Vcc = 4.5V to +6.0V.
T
CSL
T
SV
T
CZ
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 93LC66B | 4K 2.5V Microwire Serial EEPROM(4K位,2.5V,具上掉電數(shù)據(jù)保護電路,Microwire接口EEPROM) |
| 93LC66A | 4K 2.5V Microwire Serial EEPROM(4K位,2.5V,具上掉電數(shù)據(jù)保護電路,Microwire接口EEPROM) |
| 93LC66 | 4K 2.0V CMOS Serial EEPROM(4K位,2.0V,具上掉電數(shù)據(jù)保護電路,EEPROM) |
| 93LC46 | 1K 2.0V CMOS Serial EEPROM(1K位,2.0V,具上掉電數(shù)據(jù)保護電路,EEPROM) |
| 93LC56 | 2K 2.0V CMOS Serial EEPROM(2K位,2.0V,具上掉電數(shù)據(jù)保護電路,EEPROM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 93LC66B/P | 功能描述:電可擦除可編程只讀存儲器 256x16 RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| 93LC66B-/P | 制造商:Microchip Technology 功能描述:4k(256~16) 2MHz 2.5V to 5.5V VA / Microwire 8DIP 制造商:Microchip Technology 功能描述:4k(256~16) 2MHz 2.5V to 5.5V VA / Microwire 8DIP Bulk |
| 93LC66B/P | 制造商:Microchip Technology Inc 功能描述:IC EEPROM SERIAL 4K 93LC66 DIP8 |
| 93LC66B/SN | 功能描述:電可擦除可編程只讀存儲器 256x16 RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| 93LC66B/SN | 制造商:Microchip Technology Inc 功能描述:IC EEPROM SERIAL 4K 93LC66 SOIC8 |
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