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參數(shù)資料
| 型號(hào)： | 93C86-IP |
| 廠商： | Microchip Technology Inc. |
| 英文描述： | 8K/16K 5.0V Microwire Serial EEPROM |
| 中文描述： | 8K/16K 5.0V Microwire串行EEPROM的 |
| 文件頁(yè)數(shù)： | 3/12頁(yè) |
| 文件大?。?/td> | 84K |
| 代理商： | 93C86-IP |
1996 Microchip Technology Inc.
Preliminary
DS21132C-page 3
93C76/86
TABLE 1-3:
AC CHARACTERISTICS
TABLE 1-4:
INSTRUCTION SET FOR 93C76: ORG=1 (X16 ORGANIZATION)
TABLE 1-5:
INSTRUCTION SET FOR 93C76: ORG=0 (X8 ORGANIZATION)
Applicable over recommended operating ranges shown below unless otherwise noted:
V
CC
= +4.5V to +5.5V
Commercial (C):
Tamb = 0
°
C to -40
°
C
Industrial (I):
Tamb = -40
°
C to +85
°
C
Automotive (E):
Tamb = -40
°
C to +125
°
C
Parameter
Symbol
Clock frequency
F
CLK
Clock high time
T
CKH
Clock low time
T
CKL
Chip select setup time
T
CSS
Chip select hold time
T
CSH
Chip select low time
T
CSL
Data input setup time
T
DIS
Data input hold time
T
DIH
Data output delay time
T
PD
Data output disable time
T
CZ
Status valid time
T
SV
Program cycle time
T
WC
T
EC
T
WL
Endurance
—
Min.
—
300
200
50
0
250
100
100
—
—
—
—
—
—
10M
Max.
2
—
—
—
—
—
—
—
400
100
500
10
15
30
—
Units
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ms
ms
cycles
Conditions
Vcc
≥
4.5V
Relative to CLK
Relative to CLK
Relative to CLK
Relative to CLK
C
L
= 100 pF
(Note 1)
C
L
= 100 pF
ERASE/WRITE mode (Note 2)
ERAL mode
WRAL mode
25
°
C, V
CC
= 5.0V, Block Mode
(Note 3)
Note 1: This parameter is periodically sampled and not 100% tested.
2: Typical program cycle is 4 ms per word.
3: This parameter is not tested but guaranteed by characterization. For endurance estimates in a specific appli-
cation, please consult the Total Endurance Model which can be obtained on our BBS or website.
Instruction
READ
EWEN
ERASE
ERAL
WRITE
WRAL
EWDS
SB
1
1
1
1
1
1
1
Opcode
10
00
11
00
01
00
00
Address
Data In
—
—
—
—
D15 - D0
D15 - D0
—
Data Out
D15 - D0
High-Z
(RDY/BSY)
(RDY/BSY)
(RDY/BSY)
(RDY/BSY)
High-Z
Req. CLK Cycles
29
13
13
13
29
29
13
X A8 A7 A6 A5 A4 A3 A2 A1 A0
1 1 X X X X X X X X
X A8 A7 A6 A5 A4 A3 A2 A1 A0
1 0 X X X X X X X X
X A8 A7 A6 A5 A4 A3 A2 A1 A0
0 1 X X X X X X X X
0 0 X X X X X X X X
Instruction
SB
Opcode
Address
Data In
Data Out
Req. CLK
Cycles
22
14
14
14
22
22
14
READ
EWEN
ERASE
ERAL
WRITE
WRAL
EWDS
1
1
1
1
1
1
1
10
00
11
00
01
00
00
X A9 A8 A7 A6 A5 A4 A3 A2 A1 A0
1 1 X X X X X X X X X
X A9 A8 A7 A6 A5 A4 A3 A2 A1 A0
1 0 X X X X X X X X X
X A9 A8 A7 A6 A5 A4 A3 A2 A1 A0
0 1 X X X X X X X X X
0 0 X X X X X X X X X
—
—
—
—
D7 - D0
High-Z
(RDY/BSY)
(RDY/BSY)
(RDY/BSY)
(RDY/BSY)
High-Z
D7 - D0
D7 - D0
—
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 93C86-ISN | Standard Recovery Rectifier; Repetitive Reverse Voltage Max, Vrrm:400V; Forward Current Avg Rectified, IF(AV):300A; Non Repetitive Forward Surge Current Max, Ifsm:6500A; Forward Voltage Max, VF:1.4V; Package/Case:DO-205 |
| 93C86-P | MATRIX ITEMS |
| 93C86-SN | 8K/16K 5.0V Microwire Serial EEPROM |
| 93CS46 | 1K 64 x 16 SERIAL MICROWIRE EEPROM |
| 93L00 | 4-Bit Universal Shift Register |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 93C86-ISN | 制造商:MICROCHIP 制造商全稱(chēng):Microchip Technology 功能描述:8K/16K 5.0V Microwire Serial EEPROM |
| 93C86-P | 制造商:MICROCHIP 制造商全稱(chēng):Microchip Technology 功能描述:8K/16K 5.0V Microwire Serial EEPROM |
| 93C86-SN | 制造商:MICROCHIP 制造商全稱(chēng):Microchip Technology 功能描述:8K/16K 5.0V Microwire Serial EEPROM |
| 93C86T-/P | 制造商:MICROCHIP 制造商全稱(chēng):Microchip Technology 功能描述:8K/16K 5.0V Microwire Serial EEPROM |
| 93C86T-/SN | 制造商:MICROCHIP 制造商全稱(chēng):Microchip Technology 功能描述:8K/16K 5.0V Microwire Serial EEPROM |
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