
2002 May 21
2
Philips Semiconductors
Product specication
Single Schmitt-trigger inverter
74LVC1G14
FEATURES
Wide supply voltage range from 1.65 to 5.5 V
High noise immunity
Complies with JEDEC standard:
– JESD8-7 (1.65 to 1.95 V)
– JESD8-5 (2.3 to 2.7 V)
– JESD8B/JESD36 (2.7 to 3.6 V).
±24 mA output drive (VCC = 3.0 V)
CMOS low power consumption
Latch-up performance ≤250 mA
Direct interface with TTL levels
Inputs accepts voltages up to 5 V
Multiple package options
Specified from 40 to +125 °C.
DESCRIPTION
The 74LVC1G14 is a high-performance, low-power,
low-voltage, Si-gate CMOS device, superior to most
advanced CMOS compatible TTL families.
The input can be driven from either 3.3 or 5 V devices.
This feature allows the use of this device in a mixed
3.3 and 5 V environment.
Schmitt-trigger action at the input makes the circuit
tolerant for slower input rise and fall time.
This device is fully specified for partial power-down
applications using Ioff. The Ioff circuitry disables the output,
preventing the damaging backflow current through the
device when it is powered down.
The 74LVC1G14 provides the inverting buffer function with
Schmitt-trigger action.
QUICK REFERENCE DATA
Ground = 0 V; Tamb =25 °C; tr =tf ≤ 2.5 ns.
Notes
1. CPD is used to determine the dynamic power dissipation (PD in W).
PD =CPD × VCC2 × fi +(CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in Volts.
2. The condition is VI = GND to VCC.
SYMBOL
PARAMETER
CONDITIONS
TYPICAL
UNIT
tPHL/tPLH
propagation delay A to Y
VCC = 1.8 V; CL = 30 pF; RL =1k
4.1
ns
VCC = 2.5 V; CL = 30 pF; RL = 500
2.8
ns
VCC = 3.3 V; CL = 50 pF; RL = 500
3.0
ns
VCC = 5.0 V; CL = 50 pF; RL = 500
2.2
ns
CI
input capacitance
5
pF
CPD
power dissipation capacitance per buffer
notes 1 and 2
15.4
pF