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參數(shù)資料
| 型號： | 935270406118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 編、解碼器及復(fù)用、解復(fù)用 |
| 英文描述： | 2 LINE TO 1 LINE MULTIPLEXER, TRUE OUTPUT, PDSO20 |
| 封裝： | 7.50 MM, PLASTIC, MS-013, SOT-163-1, SO-20 |
| 文件頁數(shù)： | 2/17頁 |
| 文件大?。?/td> | 144K |
| 代理商： | 935270406118 |
Philips Semiconductors
Product data
PCA9545
4-channel I2C switch with interrupt logic and reset
2002 Dec 13
10
ABSOLUTE MAXIMUM RATINGS1, 2
In accordance with the Absolute Maximum Rating System (IEC 134).Voltages are referenced to GND (ground = 0 V).
RATING
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
VDD
DC supply voltage
-0.5
+7.0
V
VI
DC input voltage
-0.5
+7.0
V
II
DC input current
—
±20
mA
IO
DC output current
—
±25
mA
IDD
DC Supply current
—
±100
mA
ISS
DC Supply current
—
±100
mA
Ptot
total power dissipation
—
400
mW
Tstg
Storage temperature range
-60
+150
°C
Tamb
Operating ambient temperature
-40
+85
°C
NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability.
2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction
temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150
°C.
DC CHARACTERISTICS
VDD = 2.3 to 3.6 V; VSS = 0 V; Tamb = -40 to +85 °C; unless otherwise specified. (See page 11 for VDD = 3.6 to 5.5 V.)
LIMITS
SYMBOL
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Supply
VDD
Supply voltage
2.3
—
3.6
V
IDD
Supply current
Operating mode; VDD = 3.6 V;
no load; VI = VDD or VSS;
fSCL = 100 kHz
—
30
100
A
Istb
Standby current
Standby mode; VDD = 3.6 V;
no load; VI = VDD or VSS
—
20
100
A
VPOR
Power-on reset voltage
no load; VI = VDD or VSS
—
1.6
2.1
V
Input SCL; input/output SDA
VIL
LOW level input voltage
-0.5
—
0.3 VDD
V
VIH
HIGH level input voltage
0.7 VDD
—
6
V
VOL = 0.4 V
3
—
IOL
LOW level output current
VOL = 0.6 V
6
—
mA
IL
Leakage current
VI = VDD or VSS
-1
—
+1
A
Ci
Input capacitance
VI = VSS
—
12
13
pF
Select inputs A0 to A1 / INT0 to INT3 / RESET
VIL
LOW level input voltage
-0.5
—
+0.3 VDD
V
VIH
HIGH level input voltage
0.7 VDD
—
VDD + 0.5
V
ILI
Input leakage current
pin at VDD or VSS
-1
—
+1
A
Ci
Input capacitance
VI = VSS
—
1.6
3
pF
Pass Gate
VDD = 3.0 to 3.6 V, VO = 0.4 V, IO = 15 mA
5
20
30
RON
Switch resistance
VDD = 2.3 to 2.7 V, VO = 0.4 V, IO = 10 mA
7
26
55
Vswin = VDD = 3.3 V; Iswout = -100 A
—
2.2
—
Vswin = VDD = 3.0 to 3.6 V; Iswout = -100 A
1.6
—
2.8
VPass
Switch output voltage
Vswin = VDD = 2.5 V; Iswout = -100 A
—
1.5
—
V
Vswin = VDD = 2.3 to 2.7 V; Iswout = -100 A
1.1
—
2.0
IL
Leakage current
VI = VDD or VSS
-1
—
+1
A
Cio
Input/output capacitance
VI = VSS
—
3
5
pF
INT Output
IOL
LOW level output current
VOL = 0.4 V
3
—
mA
IOH
HIGH level output current
—
+100
A
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