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參數(shù)資料
| 型號： | 935264251112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 總線收發(fā)器 |
| 英文描述： | AVC SERIES, 18 1-BIT DRIVER, TRUE OUTPUT, PDSO56 |
| 封裝： | 6.10 MM, PLASTIC, MO-153, SOT-364-1, TSSOP-56 |
| 文件頁數(shù)： | 6/10頁 |
| 文件大?。?/td> | 88K |
| 代理商： | 935264251112 |
Philips Semiconductors
Product specification
74AVCM162835
18-bit registered driver with 15
termination
resistors (3-State)
2001 Apr 20
5
ABSOLUTE MAXIMUM RATINGS
In accordance with the Absolute Maximum Rating System (IEC 134)
Voltages are referenced to GND (ground = 0 V)
SYMBOL
PARAMETER
CONDITIONS
RATING
UNIT
VCC
DC supply voltage
–0.5 to +4.6
V
IIK
DC input diode current
VI t0
–50
mA
VI
DC input voltage
For all inputs1
–0.5 to 4.6
V
IOK
DC output diode current
VO uVCC or VO t 0
"50
mA
VO
DC output voltage; output 3-State
Note 1
–0.5 to 4.6
V
VO
DC output voltage;
output HIGH or LOW state
Note 1
–0.5 to VCC +0.5
V
IO
DC output source or sink current
VO = 0 to VCC
"50
mA
IGND, ICC
DC VCC or GND current
"100
mA
Tstg
Storage temperature range
–65 to +150
°C
PTOT
Power dissipation per package
–plastic thin-medium-shrink (TSSOP)
For temperature range: –40 to +125
°C
above +55
°C derate linearly with 8 mW/K
600
mW
NOTE:
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
DC ELECTRICAL CHARACTERISTICS
Over recommended operating conditions. Voltage are referenced to GND (ground = 0 V).
LIMITS
SYMBOL
PARAMETER
TEST CONDITIONS
Temp = –40 to +85
°C
UNIT
MIN
TYP1
MAX
VCC = 1.2 V
VCC
–
VIH
HIGH level Input voltage
VCC = 1.65 to 1.95 V
0.65VCC
0.9
–
V
VIH
HIGH level In ut voltage
VCC = 2.3 to 2.7 V
1.7
1.2
–
V
VCC = 3.0 to 3.6 V
2.0
1.5
–
VCC = 1.2 V
–
GND
VIL
LOW level Input voltage
VCC = 1.65 to 1.95 V
–
0.9
0.35VCC
V
VIL
LOW level In ut voltage
VCC = 2.3 to 2.7 V
–
1.2
0.7
V
VCC = 3.0 to 3.6 V
–
1.5
0.8
VCC = 1.65 to 3.6 V; VI = VIH or VIL;
VCC*020
VCC
–
CC
I
IH
IL
IO = –100 A
VCC*0.20
VCC
–
VOH
HIGH level output voltage
VCC = 1.65 V; VI = VIH or VIL; IO = –4 mA
VCC*0.45
VCC*0.10
–
V
VCC = 2.3 V; VI = VIH or VIL; IO = –8 mA
VCC*0.55
VCC*0.28
–
VCC = 3.0 V; VI = VIH or VIL; IO = –12 mA
VCC*0.70
VCC*0.32
–
VCC = 1.65 to 3.6 V; VI = VIH or VIL;
–
GND
020
CC
I
IH
IL
IO = 100 A
–
GND
0.20
VOL
LOW level output voltage
VCC = 1.65 V; VI = VIH or VIL; IO = 4 mA
–
0.10
0.45
V
VCC = 2.3 V; VI = VIH or VIL; IO = 8 mA
–
0.26
0.55
VCC = 3.0 V; VI = VIH or VIL; IO = 12 mA
–
0.36
0.70
VCC = 1 65 to 3 6 V;
II
Input leakage current
VCC = 1.65 to 3.6 V
VI =VCC or GND
–
0.1
2.5
A
I
g
VI = VCC or GND
IOFF
3-State output OFF-state current
VCC = 0 V; VI or VO = 3.6 V
–
0.1
"10
A
IIHZ/IILZ
3-State output OFF-state current
VCC = 1.65 to 3.6 V; VI = VCC or GND
–
0.1
12.5
A
IOZ
3-State output OFF-state current
VCC = 1.65 to 2.7 V; VI = VIH or VIL;
VO = VCC or GND
–
0.1
5
A
IOZ
3-State out ut OFF-state current
VCC = 3.0 to 3.6 V; VI = VIH or VIL;
VO = VCC or GND
–
0.1
10
A
ICC
Quiescent supply current
VCC = 1.65 to 2.7 V; VI = VCC or GND; IO = 0
–
0.1
20
A
ICC
Quiescent su
ly current
VCC = 3.0 to 3.6 V; VI = VCC or GND; IO = 0
–
0.2
40
A
NOTES:
1. All typical values are at Tamb = 25 °C.
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