
1999 Nov 11
6
Philips Semiconductors
Product specication
Satellite ZERO-IF QPSK down-converter
TDA8060TS
AC CHARACTERISTICS
Tamb =25 °C; VCC = 5 V; unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Quadrature generator
fosc
oscillator frequency range
920
2200
MHz
ΦN
osc
oscillator phase noise
at 10 kHz offset;
note 1
80
75
dBc/Hz
Φ
absolute quadrature error
note 2
0
3
deg
fLOOUT
output frequency
VPEN =0V
fosc
MHz
VPEN =VCC
1
2fosc
MHz
Vo(diff)(LOOUT)
differential output voltage at pin LOOUT
RL = 100
differential
30
22
dBm
Z
o(diff)(LOOUT)
differential output impedance at pin LOOUT
60
Conversion stage
Ri(diff)
series real part of differential input
impedance at pins RFA and RFB
note 3
34
Li(diff)
series inductance of differential input
impedance at pins RFA and RFB
note 3
5
nH
Pi(max)
maximum input power per channel
22
dBm
Pi(min)
minimum input power per channel
52
dBm
G
v/V(slope)
AGC slope
at Gv(RF-IOUT)(min)
30
43
dB/V
G
v(I-Q)
voltage gain mismatch between I and Q
1dB
t
d(g)(RF-IOUT)
group delay variation per channel (40 MHz)
from RF input to pin IOUT
0.5
2
ns
t
d(g)(RF-QOUT)
group delay variation per channel (40 MHz)
from RF input to pin QOUT
0.5
2
ns
td(g)(I-Q)(40)
group delay mismatch per channel (40 MHz)
between I and Q
0
0.5
ns
B(1dB)(RF-IOUT)
channel
1 dB bandwidth from RF input to
pin IOUT
40
50
MHz
B(1dB)(RF-QOUT)
channel
1 dB bandwidth from RF input to
pin QOUT
40
50
MHz
B(3dB)(RF-IOUT)
channel
3 dB bandwidth from RF input to
pin IOUT
70
80
MHz
B(3dB)(RF-QOUT)
channel
3 dB bandwidth from RF input to
pin QOUT
70
80
MHz
Zo(IOUT)
output impedance at pin IOUT
65
Zo(QOUT)
output impedance at pin QOUT
65
Vo(IOUT)
nominal output voltage level at pin IOUT
per channel
25
dBmV
Vo(QOUT)
nominal output voltage level at pin QOUT
per channel
25
dBmV
RoL(IOUT)
resistive load at pin IOUT
400
RoL(QOUT)
resistive load at pin QOUT
400